A1024 - описание и поиск аналогов

A1024 PNP silicon APPLICATION High Voltage Applications. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -150 V Collector-emitter voltage VCEO -150 V TO-92L 1 Emitter-base voltage VEBO -5 V 1. Emitter 2. Collector 3. Base Collector current IC -50 mA Collector Power Dissipation PC 1W Junction Temper

May 2010 FDMA1024NZ Dual N-Channel PowerTrench MOSFET 20 V, 5.0 A, 54 m Features General Description Max rDS(on) = 54 m at VGS = 4.5 V, ID = 5.0 A This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other Max rDS(on) = 66 m at VGS = 2.5 V, ID = 4.2 A ultra-portable applications. It features two indepe

SEMICONDUCTOR KTA1024 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. B D FEATURES High Voltage VCEO=-150V. Low Output Capacitance Cob=5.0pF(Max.). DIM MILLIMETERS P High Transition Frequency fT=120MHz (Typ.). DEPTH 0.2 A 7.20 MAX Complementary to KTC3206. B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MAX K F 1.27 G 1.70 MAX H 0.55 MAX FF _

KTA1024 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 5.100 2 3 1 Features High Voltage VCEO=-150V. 7.800 8.200 Low Output Capacitance Cob=5.0pF(Max.). High Transition frequency fT=120MHz (Typ.). 0.600 0.800 Complementary to KTC3206. 0.350 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.550 13.800 14.200 Symbol Paramete

DIP Type Transistors PNP Transistors KTA1024 TO-92L Unit mm 4.9 0.2 Features 0.7 0.1 High Voltage and High fT Low Output Capacitance 0.45 0.1 Comlementary to KTC3206 2 1 3 1.27 2.54 0.1 1.60 (max) Emitter 1. 2.Collector 3.Base 4.0(min) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -150