A1024 PNP silicon APPLICATION: High Voltage Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -150 VCollector-emitter voltage VCEO -150 VTO-92L1Emitter-base voltage VEBO -5 V1. Emitter 2. Collector 3. BaseCollector current IC -50 mACollector Power Dissipation PC 1WJunction Temper

May 2010FDMA1024NZDual N-Channel PowerTrench MOSFET 20 V, 5.0 A, 54 mFeatures General Description Max rDS(on) = 54 m at VGS = 4.5 V, ID = 5.0 AThis device is designed specifically as a single package solution for dual switching requirements in cellular handset and other Max rDS(on) = 66 m at VGS = 2.5 V, ID = 4.2 Aultra-portable applications. It features two indepe

SEMICONDUCTOR KTA1024TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.B DFEATURESHigh Voltage : VCEO=-150V.Low Output Capacitance : Cob=5.0pF(Max.).DIM MILLIMETERSPHigh Transition Frequency : fT=120MHz (Typ.).DEPTH:0.2A 7.20 MAXComplementary to KTC3206. B 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MAXKF 1.27G 1.70 MAXH 0.55 MAXFF_

KTA1024 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features High Voltage : VCEO=-150V. 7.8008.200 Low Output Capacitance : Cob=5.0pF(Max.). High Transition frequency : fT=120MHz (Typ.). 0.6000.800Complementary to KTC3206. 0.350MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.55013.80014.200Symbol Paramete

DIP Type TransistorsPNP TransistorsKTA1024TO-92LUnit:mm4.9 0.2 Features0.7 0.1 High Voltage and High fT Low Output Capacitance0.45 0.1 Comlementary to KTC320621 31.27 2.54 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -150