A608 PNP silicon APPLICATIONFrequency Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -55 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -5 VCollector current IC -100 mACollector Power Dissipation PC 400 mWJunction Temperature TJ 150Storage Temperature Rang

Ordering number : ENN6324A2SA608N / 2SC536NPNP / NPN Epitaxial Planar Silicon Transistors2SA608N / 2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to high unit : mmfrequency range. 2205[2SA608N / 2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.50.450.441

Ordering number:ENN6324PNP/NPN Epitaxial Planar Silicon Transistors2SA608N/2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to highunit:mmfrequency range.2164[2SA608N/2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.450.51.270.45 0.441 2 31 : Emitter

2SA608N -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Large current capacity and wide ASO. G HAPPLICATIONS EmitterCollector Capable of being used in the low frequency to Base Jhigh frequency range. A DMillimeterREF.B Min.

2SA608 -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Capable of being used in the low frequency to high frequency range. G Large current capacity and wide ASO. HEmitterCollector Base CLASSIFICATION OF hFE JA DProduct-Rank 2SA60

PNP + NPN Darlington3-phase motor driveSMA6080 External dimensions SMABAbsolute maximum ratings(Ta=25C)RatingsSymbol UnitNPN PNPVCBO 60 60 VVCEO 60 60 VVEBO 6 6VIC 2 2AICP 4 (PW1ms, Du50%) 4 (PW1ms, Du50%) AIB 0.5 0.5 A4 (Ta=25C)PT W20 (Tc=25C)Tj 150 CTstg 40 to +150 C jc 6.25 C/W Equivalent

2SA608(PNP) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Capable of being used in the low frequency to high frequency range. Large current capacity and wide ASO. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -30 VDimensions in inches and (mil

3DA608 NPN A B C D E F PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55~150 V(BR)CEO ICE=10mA 30 50 80 100 150 200 V V(BR)EBO IEB=5mA 4.0 V VCE=10V VCE=20V VCE=30V ICEO 2.0 mA VCE=40V VCE=60V VCE=80V IC=5.0A VCEsat 1.0 V IB=0.5A VCE=3.

A608N PNP silicon APPLICATIONFrequency Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltageVCBO -50 VCollector-emitter voltageVCEO -50 VEmitter-base voltage VEBO -6 VCollector currentIC -150 mACollector Power DissipationICP -400 mAJunction TemperaturePC 500 mWJunction Tempera

http://www.ncepower.comNCEA6080KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6080K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.Schematic diagramGeneral Features V =60V,I =80ADS DR

RoHS 2SA608S 2SA608S TRANSISTOR (PNP) TO-92S FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PCM : 300 mW (Tamb=25) 3. BASE Collector current ICM : -100 mA 123 Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

isc Silicon NPN Power Transistor 3DA608DESCRIPTIONHigh DC Current Gain-: h : 20-180@I = 7.5AFE CExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as an output device in complementaryaudio amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT3DA608A 40