A1162 PNP silicon APPLICATION:Audio Frequency General Purpose Amplifier Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -55 V 3Collector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -5 VCollector current IC -150 mA 1Collector Power Dissipation PC 150 mW2Junction Temperature TJ 150

2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70 to 400 Low noise: NF = 1dB (typ.), 10dB (max) Complementar

2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70~400 Low noise: NF = 1dB (typ.), 10dB (max) Complementary t

MCC2SA1162-OTM Micro Commercial Components20736 Marilla Street Chatsworth2SA1162-YMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SA1162-GRFax: (818) 701-4939Features Capable of 0.15Watts of Power Dissipation.PNP Silicon Collector-current: 0.15A Collector-base Voltage: -50V Plastic-Encapsulate Operating and storage junction temperature rang

MCC2SA1162-OTM Micro Commercial Components20736 Marilla Street Chatsworth2SA1162-YMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SA1162-GRFax: (818) 701-4939Features Capable of 0.15Watts of Power Dissipation.PNP Silicon Collector-current: 0.15A Collector-base Voltage: -50V Plastic-Encapsulate Operating and storage junction temperature rang

MCC2SA1162-OTM Micro Commercial Components20736 Marilla Street Chatsworth2SA1162-YMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SA1162-GRFax: (818) 701-4939Features Capable of 0.15Watts of Power Dissipation.PNP Silicon Collector-current: 0.15A Collector-base Voltage: -50V Plastic-Encapsulate Operating and storage junction temperature rang

MSA1162GT1GGeneral Purpose AmplifierTransistorsPNP Surface MountFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 This is a Pb-Free DeviceCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value UnitCollector-Base Voltage V(BR)CBO 60 VdcCollector-Emitter Voltage V(BR)CEO 50 Vdc1 2BASE EMITTEREmitter-Base Voltage V(BR)EBO 7.0 VdcCollector Current -

2SA1162GT1, 2SA1162YT1General PurposeAmplifier TransistorsPNP Surface Mount Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: TBDCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value UnitCollector-Base Voltage V(BR)CBO 50 VdcCollector-Emitter Voltage V(BR)CEO 50 VdcEmitter-Base Voltage V(BR)EBO 7.0 Vdc2 1BASE EMITTERCollector Current - Continuo

MSA1162GT1, MSA1162YT1General Purpose AmplifierTransistorsPNP Surface Mounthttp://onsemi.comFeatures Moisture Sensitivity Level: 1COLLECTOR ESD Rating: TBD 3 Pb-Free Packages are AvailableMAXIMUM RATINGS (TA = 25C)Rating Symbol Value Unit2 1Collector-Base Voltage V(BR)CBO 60 VdcBASE EMITTERCollector-Emitter Voltage V(BR)CEO 50 VdcEmitter-Base Voltage V

2SA1162 -0.15A, -50V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Low Noise: NF=1 dB(Typ.), 10 dB(Max.) A Complements of the 2SC2712 L33MECHANICAL DATA Top ViewC B Case: SOT-23, Molded Plastic 11 2 Weight: 0.008 grams(approx.) 2K

IS/ISO 9002 IS / IECQC 700000Lic# QSC/L- 000019.2 IS / IECQC 750100Continental Device India LimitedAn IS/ISO 9002 and IECQ Certified ManufacturerSOT-23 Formed SMD Package CSA1162LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTORP-N-P transistorMarking PACKAGE OUTLINE DETAILSALL DIMENSIONS IN mmCSA1162Y3ECSA1162GR(G)3FPin configuration1 = BASE2 = EMITTER3 = COLL

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1 162 TRANSISTOR (PNP) 3FEATURES 1 . Low noise 2 . Complementary to 2SC2712 1. BASE . Small Package 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Coll

2SA1 1 62 TRANSISTOR(PNP)SOT-23 FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. 1. BASE . Small Package. 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 VVCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM1162MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO -50 Vdc-

2SA1162 SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Low noise: NF=1dB(Typ.)10dB(Max.) Complementary to 2SC2712 Small package MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage

2SA162 SOT-23-3L Transistor(PNP)SOT-23-3L1. BASE 2. EMITTER 2.920.353. COLLECTOR 1.17Features2.80 1.60 Low noise : NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package. 0.151.90MARKING: SO , SY , SG Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base V

2SA1162 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,,,, 2SC2712 High voltage and current, excellent hFE linearity, high hFE, low noise, complementary to 2SC2712. /

SMD Type TransistorsPNP Transistors2SA1162SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features High voltage and high current High hFE: hFE = 70~400 1 2+0.1+0.050.95 -0.1 0.1 -0.01 Low noise: NF = 1dB (typ.), 10dB (max)1.9+0.1-0.1 Complementary to 2SC27121.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol

SMD Type TransistorsPNP Transistors2SA1162-HFSOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features High voltage and high current1 2 High hFE: hFE = 70~400+0.02+0.10.15 -0.020.95 -0.1 Low noise: NF = 1dB (typ.), 10dB (max) +0.11.9-0.2 Complementary to 2SC2712-HF Pb-Free Package May be Available. The G-Suffix Denotes a1. Base Pb-Fre

2SA1162Silicon Epitaxial Planar Transistor FEATURES Low noise: NF=1dB(Typ),10dB(Max). Complementary to 2SC2712. Small package. APPLICATIONS General purpose application. ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified REV.08 1 of 42SA1162ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified REV.08 2 of 42SA1162TYPIC

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD2SA1162MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageVCEO -50 Vdc-Collector-Base VoltageVCBO -50 Vdc-Emitter-Base VoltageVEBO -5.0 Vdc-C