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A1162 PNP silicon APPLICATION Audio Frequency General Purpose Amplifier Applications. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -55 V 3 Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA 1 Collector Power Dissipation PC 150 mW 2 Junction Temperature TJ 150

2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 70 to 400 Low noise NF = 1dB (typ.), 10dB (max) Complementar

2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 70 400 Low noise NF = 1dB (typ.), 10dB (max) Complementary t

MCC 2SA1162-O TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SA1162-Y Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1162-GR Fax (818) 701-4939 Features Capable of 0.15Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage -50V Plastic-Encapsulate Operating and storage junction temperature rang

MCC 2SA1162-O TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SA1162-Y Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1162-GR Fax (818) 701-4939 Features Capable of 0.15Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage -50V Plastic-Encapsulate Operating and storage junction temperature rang

MCC 2SA1162-O TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SA1162-Y Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1162-GR Fax (818) 701-4939 Features Capable of 0.15Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage -50V Plastic-Encapsulate Operating and storage junction temperature rang

MSA1162GT1G General Purpose Amplifier Transistors PNP Surface Mount Features http //onsemi.com Moisture Sensitivity Level 1 This is a Pb-Free Device COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc 1 2 BASE EMITTER Emitter-Base Voltage V(BR)EBO 7.0 Vdc Collector Current -

2SA1162GT1, 2SA1162YT1 General Purpose Amplifier Transistors PNP Surface Mount Moisture Sensitivity Level 1 http //onsemi.com ESD Rating TBD COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 50 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc 2 1 BASE EMITTER Collector Current - Continuo

MSA1162GT1, MSA1162YT1 General Purpose Amplifier Transistors PNP Surface Mount http //onsemi.com Features Moisture Sensitivity Level 1 COLLECTOR ESD Rating TBD 3 Pb-Free Packages are Available MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit 2 1 Collector-Base Voltage V(BR)CBO 60 Vdc BASE EMITTER Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V

2SA1162 -0.15A, -50V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Low Noise NF=1 dB(Typ.), 10 dB(Max.) A Complements of the 2SC2712 L 3 3 MECHANICAL DATA Top View C B Case SOT-23, Molded Plastic 1 1 2 Weight 0.008 grams(approx.) 2 K

IS/ISO 9002 IS / IECQC 700000 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm CSA1162Y 3E CSA1162GR(G) 3F Pin configuration 1 = BASE 2 = EMITTER 3 = COLL

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1 162 TRANSISTOR (PNP) 3 FEATURES 1 . Low noise 2 . Complementary to 2SC2712 1. BASE . Small Package 2. EMITTER 3. COLLECTOR MARKING SO , SY , SG MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Coll

2SA1 1 62 TRANSISTOR(PNP) SOT-23 FEATURES . Low noise NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. 1. BASE . Small Package. 2. EMITTER 3. COLLECTOR MARKING SO , SY , SG MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM1162 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -50 Vdc -

2SA1162 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Low noise NF=1dB(Typ.)10dB(Max.) Complementary to 2SC2712 Small package MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage

2SA162 SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Low noise NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package. 0.15 1.90 MARKING SO , SY , SG Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base V

2SA1162 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , , , , 2SC2712 High voltage and current, excellent hFE linearity, high hFE, low noise, complementary to 2SC2712. /

SMD Type Transistors PNP Transistors 2SA1162 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High voltage and high current High hFE hFE = 70 400 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Low noise NF = 1dB (typ.), 10dB (max) 1.9+0.1 -0.1 Complementary to 2SC2712 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol

SMD Type Transistors PNP Transistors 2SA1162-HF SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features High voltage and high current 1 2 High hFE hFE = 70 400 +0.02 +0.1 0.15 -0.02 0.95 -0.1 Low noise NF = 1dB (typ.), 10dB (max) +0.1 1.9-0.2 Complementary to 2SC2712-HF Pb-Free Package May be Available. The G-Suffix Denotes a 1. Base Pb-Fre

2SA1162 Silicon Epitaxial Planar Transistor FEATURES Low noise NF=1dB(Typ),10dB(Max). Complementary to 2SC2712. Small package. APPLICATIONS General purpose application. ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified REV.08 1 of 4 2SA1162 ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified REV.08 2 of 4 2SA1162 TYPIC

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD 2SA1162 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -50 Vdc - Collector-Base Voltage VCBO -50 Vdc - Emitter-Base Voltage VEBO -5.0 Vdc - C