A1241 PNP silicon APPLICATIONPower Amplifier Application,Power Switching Application.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -50 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -5 VCollector current IC -2 ACollector Power Dissipation PC 1WJunction Temperature TJ 150

2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1241 Power Amplifier Applications Unit: mm Power Switching Applications Low Collector saturation voltage: VCE (sat) = -0.5 V (max) (I = -1 A) C Excellent switching time: t = 1.0 s (typ.) stg Complementary to 2SC3076 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollecto

SEMICONDUCTOR KTA1241TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSTROBO FLASH APPLICATION.HIGH CURRENT APPLICATION.B DFEATUREShFE=100 320 (VCE=-2V, IC=-0.5A).DIM MILLIMETERSPhFE=70(Min.) (VCE=-2V, IC=-4A).DEPTH:0.2A 7.20 MAXLow Collector Saturation Voltage. B 5.20 MAXCC 0.60 MAXS: VCE(sat)=-0.5V (IC=-3A, IB=-75mA). D 2.50 MAXQE 1.15 MAXKHigh Power Dis

SEMICONDUCTORFTA1241TECHNICAL DATAFTA1241 TRANSISTOR (PNP) BFEATURES Low Collector Saturation Voltage High Power Dissipation EDIM MILLIMETERSA 8.2 MAXDMAXIMUM RATINGS (Ta=25 unless otherwise noted) B 5.1 MAXC 1.58 MAXD 0.55 MAXSymbol Parameter Value Unit E 0.7 TYPF 1.27 TYPG 2.54 TYPVCBO Collector-Base Voltage -35 V FH 14.20 MAX GJ 0.45 MAX