A1241 Todos los transistores

2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1241 Power Amplifier Applications Unit mm Power Switching Applications Low Collector saturation voltage VCE (sat) = -0.5 V (max) (I = -1 A) C Excellent switching time t = 1.0 s (typ.) stg Complementary to 2SC3076 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collecto

SEMICONDUCTOR KTA1241 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. B D FEATURES hFE=100 320 (VCE=-2V, IC=-0.5A). DIM MILLIMETERS P hFE=70(Min.) (VCE=-2V, IC=-4A). DEPTH 0.2 A 7.20 MAX Low Collector Saturation Voltage. B 5.20 MAX C C 0.60 MAX S VCE(sat)=-0.5V (IC=-3A, IB=-75mA). D 2.50 MAX Q E 1.15 MAX K High Power Dis

SEMICONDUCTOR FTA1241 TECHNICAL DATA FTA1241 TRANSISTOR (PNP) B FEATURES Low Collector Saturation Voltage High Power Dissipation E DIM MILLIMETERS A 8.2 MAX D MAXIMUM RATINGS (Ta=25 unless otherwise noted) B 5.1 MAX C 1.58 MAX D 0.55 MAX Symbol Parameter Value Unit E 0.7 TYP F 1.27 TYP G 2.54 TYP VCBO Collector-Base Voltage -35 V F H 14.20 MAX G J 0.45 MAX