Биполярный транзистор A1266 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: A1266
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.63 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 80 MHz
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора: TO92
A1266 Datasheet (PDF)
a1266.pdf
A1266 PNP silicon APPLICATIONGENERAL PURPOSE APPLICATION.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -50 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -5 VCollector current IC -150 mACollector Power Dissipation PC 625 mWJunction Temperature TJ 150Storage Temperature Range Tstg
kta1266.pdf
SEMICONDUCTOR KTA1266TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURES Excellent hFE Linearity: hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).Low Noise : NF=1dB(Typ.). at f=1kHz.Complementary to KTC3198. MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -50 VCollecto
kta1266a.pdf
SEMICONDUCTOR KTA1266ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURES Excellent hFE Linearity: hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).N DIM MILLIMETERSA 4.70 MAXLow Noise : NF=1dB(Typ.). at f=1kHz. EKB 4.80 MAXGComplementary to KTC3198A. C 3.70 MAXDD 0.45E
kta1266.pdf
KTA1266(PNP)TO-92 TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE Linearity Low noise Complementary to KTC3198 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)IC Co
kta1266.pdf
KTA1266WEITRONPNP Plastic-Encapsulate TransistorP b Lead(Pb)-Free1. EMITTER2. COLLECTOR3. BASEFEATURES : Excellent hFE LinearityTO-92 Low noiseMAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitsCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base Voltage VEBO -5 VCollector Current -Continuous IC -0.1
kta1266.pdf
KTA1266 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features ,, KTC3198 Excellent hFE linearity, low noise, complementary pair with KTC3198. / Applications General purpose and switchi
fta1266.pdf
SEMICONDUCTORFTA1266TECHNICAL DATATRANSISTOR (NPN) B CFEATURES General Purpose Switching Application Complementary to FTC3198.DIM MILLIMETERSA 4.70 MAXEB 4.80 MAX GC 3.70 MAXDD 0.55 MAXMAXIMUM RATINGS (Ta=25 unless otherwise noted) E 1.00F 1.27G 0.85Symbo Parameter Value UnitH 0.45_HVCBO Collector-Base Voltage -60 V J 14.00 + 0.50L 2.30F
kta1266.pdf
DIP Type TransistorsPNP TransistorsKTA1266Unit:mmTO-924.8 0.3 3.8 0.3 Features Excellent hFE Linearity Low Noise Complementary to KTC31980.60 Max0.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS | HSA1037AKR | HSA1037AKQ