Справочник транзисторов. A1266

 

Биполярный транзистор A1266 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: A1266
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.63 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.15 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 80 MHz
   Ёмкость коллекторного перехода (Cc): 4 pf
   Статический коэффициент передачи тока (hfe): 70
   Корпус транзистора: TO92

 Аналоги (замена) для A1266

 

 

A1266 Datasheet (PDF)

 ..1. Size:204K  fgx
a1266.pdf

A1266

A1266 PNP silicon APPLICATIONGENERAL PURPOSE APPLICATION.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -50 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -5 VCollector current IC -150 mACollector Power Dissipation PC 625 mWJunction Temperature TJ 150Storage Temperature Range Tstg

 0.1. Size:635K  kec
kta1266.pdf

A1266
A1266

SEMICONDUCTOR KTA1266TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURES Excellent hFE Linearity: hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).Low Noise : NF=1dB(Typ.). at f=1kHz.Complementary to KTC3198. MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -50 VCollecto

 0.2. Size:51K  kec
kta1266a.pdf

A1266
A1266

SEMICONDUCTOR KTA1266ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURES Excellent hFE Linearity: hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).N DIM MILLIMETERSA 4.70 MAXLow Noise : NF=1dB(Typ.). at f=1kHz. EKB 4.80 MAXGComplementary to KTC3198A. C 3.70 MAXDD 0.45E

 0.3. Size:41K  kec
2sa1266.pdf

A1266

 0.4. Size:245K  lge
kta1266.pdf

A1266
A1266

KTA1266(PNP)TO-92 TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE Linearity Low noise Complementary to KTC3198 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)IC Co

 0.5. Size:210K  wietron
kta1266.pdf

A1266
A1266

KTA1266WEITRONPNP Plastic-Encapsulate TransistorP b Lead(Pb)-Free1. EMITTER2. COLLECTOR3. BASEFEATURES : Excellent hFE LinearityTO-92 Low noiseMAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitsCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base Voltage VEBO -5 VCollector Current -Continuous IC -0.1

 0.6. Size:1405K  blue-rocket-elect
kta1266.pdf

A1266
A1266

KTA1266 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features ,, KTC3198 Excellent hFE linearity, low noise, complementary pair with KTC3198. / Applications General purpose and switchi

 0.7. Size:269K  first silicon
fta1266.pdf

A1266
A1266

SEMICONDUCTORFTA1266TECHNICAL DATATRANSISTOR (NPN) B CFEATURES General Purpose Switching Application Complementary to FTC3198.DIM MILLIMETERSA 4.70 MAXEB 4.80 MAX GC 3.70 MAXDD 0.55 MAXMAXIMUM RATINGS (Ta=25 unless otherwise noted) E 1.00F 1.27G 0.85Symbo Parameter Value UnitH 0.45_HVCBO Collector-Base Voltage -60 V J 14.00 + 0.50L 2.30F

 0.8. Size:1113K  kexin
kta1266.pdf

A1266
A1266

DIP Type TransistorsPNP TransistorsKTA1266Unit:mmTO-924.8 0.3 3.8 0.3 Features Excellent hFE Linearity Low Noise Complementary to KTC31980.60 Max0.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO

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