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A1266 PDF Specs and Replacement


   Type Designator: A1266
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.63 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO92
 

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A1266 PDF detailed specifications

 ..1. Size:204K  fgx
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A1266

A1266 PNP silicon APPLICATION GENERAL PURPOSE APPLICATION. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA Collector Power Dissipation PC 625 mW Junction Temperature TJ 150 Storage Temperature Range Tstg... See More ⇒

 0.1. Size:635K  kec
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A1266

SEMICONDUCTOR KTA1266 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise NF=1dB(Typ.). at f=1kHz. Complementary to KTC3198. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -50 V Collecto... See More ⇒

 0.2. Size:51K  kec
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A1266

SEMICONDUCTOR KTA1266A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS A 4.70 MAX Low Noise NF=1dB(Typ.). at f=1kHz. E K B 4.80 MAX G Complementary to KTC3198A. C 3.70 MAX D D 0.45 E... See More ⇒

 0.3. Size:41K  kec
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A1266

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Detailed specifications: A1162 , A1163 , A1175 , A1182 , A1213 , A1241 , A1246 , A1255 , SS8050 , A1267 , A1267S , A1270 , A1271 , A1273 , A1273A , A1276 , A1296 .

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