A1266 PDF Specs and Replacement
Type Designator: A1266
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.63 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO92
A1266 Substitution
A1266 PDF detailed specifications
a1266.pdf
A1266 PNP silicon APPLICATION GENERAL PURPOSE APPLICATION. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA Collector Power Dissipation PC 625 mW Junction Temperature TJ 150 Storage Temperature Range Tstg... See More ⇒
kta1266.pdf
SEMICONDUCTOR KTA1266 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise NF=1dB(Typ.). at f=1kHz. Complementary to KTC3198. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -50 V Collecto... See More ⇒
kta1266a.pdf
SEMICONDUCTOR KTA1266A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS A 4.70 MAX Low Noise NF=1dB(Typ.). at f=1kHz. E K B 4.80 MAX G Complementary to KTC3198A. C 3.70 MAX D D 0.45 E... See More ⇒
Detailed specifications: A1162 , A1163 , A1175 , A1182 , A1213 , A1241 , A1246 , A1255 , SS8050 , A1267 , A1267S , A1270 , A1271 , A1273 , A1273A , A1276 , A1296 .
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