A1271 PNP silicon APPLICATIONHigh Current Application.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO -5 VCollector current IC -800 mACollector Power Dissipation PC -625 mWJunction Temperature TJ 150Storage Temperature

SEMICONDUCTOR KTA1271ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATURES B CHigh hFE : hFE=100320.Complementary to KTC3203A.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGMAXIMUM RATING (Ta=25)C 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27G 0.85VCBO -35 VCollector-Base VoltageH 0.45_HJ 14.00 + 0

SEMICONDUCTOR KTA1271TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. B CFEATURES High hFE : hFE=100 320. Complementary to KTC3203.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85VCBO -35 VCollector-Base Voltage H 0.45_HJ 14.00 + 0.50K 0.

SEMICONDUCTORFTA1271TECHNICAL DATAGeneral Purpose TransistorB CPNP SiliconFEATURE DIM MILLIMETERS High DC Current Gain A 4.70 MAXEB 4.80 MAXG Complementary to KTC3203 C 3.70 MAXDD 0.55 MAXE 1.00F 1.27MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85H 0.45_HSymbo Parameter Value Unit J 14.00 + 0.50L 2.30F FVCBO Collector-Base Voltage -