A1271 - Даташиты. Аналоги. Основные параметры

A1271 PNP silicon APPLICATION High Current Application. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA Collector Power Dissipation PC -625 mW Junction Temperature TJ 150 Storage Temperature

SEMICONDUCTOR KTA1271A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B C High hFE hFE=100 320. Complementary to KTC3203A. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25 ) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 G 0.85 VCBO -35 V Collector-Base Voltage H 0.45 _ H J 14.00 + 0

SEMICONDUCTOR KTA1271 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURES High hFE hFE=100 320. Complementary to KTC3203. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 VCBO -35 V Collector-Base Voltage H 0.45 _ H J 14.00 + 0.50 K 0.

SEMICONDUCTOR FTA1271 TECHNICAL DATA General Purpose Transistor B C PNP Silicon FEATURE DIM MILLIMETERS High DC Current Gain A 4.70 MAX E B 4.80 MAX G Complementary to KTC3203 C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85 H 0.45 _ H Symbo Parameter Value Unit J 14.00 + 0.50 L 2.30 F F VCBO Collector-Base Voltage -