Биполярный транзистор A1586
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: A1586
Маркировка: SO_SY_SG_SL
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.1
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.15
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 190
MHz
Ёмкость коллекторного перехода (Cc): 4.5
pf
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора:
SOT23
SOT323
Аналоги (замена) для A1586
A1586
Datasheet (PDF)
..1. Size:341K fgx
a1586.pdf 
A1586 PNP silicon APPLICATION:Audio Frequency General Purpose Amplifier Applications.MAXIMUM RATINGSTa25 SOT-323 PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -50 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -5 VCollector current IC -150 mA 1Collector Power Dissipation PC 100 mW2Junction
0.1. Size:200K toshiba
2sa1586.pdf 
2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1586 Audio Frequency General Purpose Amplifier Applications Unit: mmHigh voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70~400 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2
0.2. Size:303K toshiba
2sa1586-o 2sa1586-y 2sa1586-gr.pdf 
2SA1586Bipolar Transistors Silicon PNP Epitaxial Type2SA15861. Applications Low-Frequency Amplifiers Audio Frequency General Purpose Amplifier Applications2. Features(1) AEC-Q101 qualified (Please see the orderable part number list)(2) High voltage: VCEO = -50 V(3) High collector current: IC = -150 mA (max)(4) High hFE: hFE = 70 to 400(5) Excellent hFE linearity: hFE
0.3. Size:203K toshiba
tta1586fu.pdf 
TTA1586FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) TTA1586FU Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 120 to 400 Low noise: NF = 1dB (typ.), 10dB (max) Comple
0.4. Size:77K secos
2sa1586.pdf 
2SA1586 -0.15 A, -50 V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High DC Current Gain High Voltage and High Current AL Complementary to 2SC4116 33 Small Package Top View C B11 22K EAPPLICATIONS General Purpose Amplifi
0.5. Size:278K htsemi
2sa1586.pdf 
2SA1 58 6TRANSISTOR(PNP)FEATURES SOT323 High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package APPLICATIONS General Purpose Amplification. 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter
0.6. Size:1130K kexin
2sa1586.pdf 
SMD Type TransistorsPNP Transistors2SA1586 Features High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collec
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