A2071 - Даташиты. Аналоги. Основные параметры

A2071 PNP Transistors PNP Silicon APPLICATION Low Frequency Amplifier and High speed switching. MAXIMUM RATINGS Ta=25 PARAMETER SYMBOL RATING UNIT SOT-89 Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V 1. BASE Emitter-base voltage VEBO -6 V 2. COLLECTOR 1 Collector current Ic -3 A 2 Base Peak curr

2SA2071 Datasheet Middle Power transistor (-60V, -3A) lOutline l SOT-89 Parameter Value SC-62 VCEO -60V IC -3A MPT3 lFeatures lInner circuit l l 1)High speed switching. 2)Low saturation voltage. (Typ. -200mV at IC=-2A, lB=-0.2A) 3)Strong discharge power for inductive load and capacitance load. 4)Complements the 2SC5824 lA

ST 2SA2071U PNP Silicon Epitaxial Planar Transistor Lowe frequency amplifier and high speed switching Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 60 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 3 A Collector Current (Pw = 100 ms) -ICP 6 A 0.5 PC W Collector Power Dissipation 2 1

SMD Type Transistors PNP Transistors 2SA2071-Q SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-3A Collector Emitter Voltage VCEO=-60V High speed switching. 0.42 0.1 Complements the 2SC5824 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Colle