Справочник транзисторов. SBN13002

 

Биполярный транзистор SBN13002 Даташит. Аналоги


   Наименование производителя: SBN13002
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 12 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 1.25 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 9
   Корпус транзистора: TO92
 

 Аналог (замена) для SBN13002

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SBN13002 Datasheet (PDF)

 ..1. Size:170K  semiwell
 sbn13002.pdf pdf_icon

SBN13002

SemiWell Semiconductor SBN13002 High Voltage Fast-Switching NPN Power Transistor Features High Voltage High Speed switching General Description TO-92This device is designed high voltage and high speed switching characteristic required to lighting system, switching Regulator and inverter motor controls. Absolute Maximum Ratings (TJ = 25 unless otherwise specif

 0.1. Size:273K  winsemi
 sbn13002d.pdf pdf_icon

SBN13002

SBN13002DSBN13002DSBN13002DSBN13002DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol2.Collector Very High Switching Speed High Voltage Capability1.Base Wide Reverse Bias SOA3.Emitter Built -in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, high speedswitching characteristics required suc

 7.1. Size:147K  winsemi
 sbn13003hb.pdf pdf_icon

SBN13002

SBN13003HBHigh Voltage FastSwitching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum RatingsSymbol Parameter Test Conditions Value

 7.2. Size:273K  winsemi
 sbn13003a.pdf pdf_icon

SBN13002

SBN13002DSBN13002DSBN13002DSBN13002DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol2.Collector Very High Switching Speed High Voltage Capability1.Base Wide Reverse Bias SOA3.Emitter Built -in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, high speedswitching characteristics required suc

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Другие транзисторы... SBCW33LT1G , SBCW66GLT1G , SBCW72LT1G , SBCX19LT1G , SBF13007-O , SBF13009-O , SBF720T1G , SBN13001 , BC549 , SBN13002D , SBN13003A , SBN13003A1 , SBN13003HB , SBR13003A , SBR13003B , SBR13003B1 , SBR13003BD .

History: INA6005AP1

 

 
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