All Transistors. SBN13002 Datasheet

 

SBN13002 Datasheet and Replacement


   Type Designator: SBN13002
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 1.25 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 9
   Noise Figure, dB: -
   Package: TO92
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SBN13002 Datasheet (PDF)

 ..1. Size:170K  semiwell
 sbn13002.pdf pdf_icon

SBN13002

SemiWell Semiconductor SBN13002 High Voltage Fast-Switching NPN Power Transistor Features High Voltage High Speed switching General Description TO-92This device is designed high voltage and high speed switching characteristic required to lighting system, switching Regulator and inverter motor controls. Absolute Maximum Ratings (TJ = 25 unless otherwise specif

 0.1. Size:273K  winsemi
 sbn13002d.pdf pdf_icon

SBN13002

SBN13002DSBN13002DSBN13002DSBN13002DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol2.Collector Very High Switching Speed High Voltage Capability1.Base Wide Reverse Bias SOA3.Emitter Built -in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, high speedswitching characteristics required suc

 7.1. Size:147K  winsemi
 sbn13003hb.pdf pdf_icon

SBN13002

SBN13003HBHigh Voltage FastSwitching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum RatingsSymbol Parameter Test Conditions Value

 7.2. Size:273K  winsemi
 sbn13003a.pdf pdf_icon

SBN13002

SBN13002DSBN13002DSBN13002DSBN13002DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol2.Collector Very High Switching Speed High Voltage Capability1.Base Wide Reverse Bias SOA3.Emitter Built -in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, high speedswitching characteristics required suc

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History: RN1909 | TN4248 | RN1106CT | BC313 | RN2906AFS | NTE2547 | SJ5438

Keywords - SBN13002 transistor datasheet

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