All Transistors. SBN13002 Datasheet

 

SBN13002 Datasheet, Equivalent, Cross Reference Search


   Type Designator: SBN13002
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 1.25 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 9
   Noise Figure, dB: -
   Package: TO92

 SBN13002 Transistor Equivalent Substitute - Cross-Reference Search

   

SBN13002 Datasheet (PDF)

 ..1. Size:170K  semiwell
sbn13002.pdf

SBN13002
SBN13002

SemiWell Semiconductor SBN13002 High Voltage Fast-Switching NPN Power Transistor Features High Voltage High Speed switching General Description TO-92This device is designed high voltage and high speed switching characteristic required to lighting system, switching Regulator and inverter motor controls. Absolute Maximum Ratings (TJ = 25 unless otherwise specif

 0.1. Size:273K  winsemi
sbn13002d.pdf

SBN13002
SBN13002

SBN13002DSBN13002DSBN13002DSBN13002DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol2.Collector Very High Switching Speed High Voltage Capability1.Base Wide Reverse Bias SOA3.Emitter Built -in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, high speedswitching characteristics required suc

 7.1. Size:147K  winsemi
sbn13003hb.pdf

SBN13002
SBN13002

SBN13003HBHigh Voltage FastSwitching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum RatingsSymbol Parameter Test Conditions Value

 7.2. Size:273K  winsemi
sbn13003a.pdf

SBN13002
SBN13002

SBN13002DSBN13002DSBN13002DSBN13002DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol2.Collector Very High Switching Speed High Voltage Capability1.Base Wide Reverse Bias SOA3.Emitter Built -in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, high speedswitching characteristics required suc

 7.3. Size:406K  winsemi
sbn13003a1.pdf

SBN13002
SBN13002

SBN13003A1SBN13003A1SBN13003A1SBN13003A1High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedswitching Characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par

 7.4. Size:323K  winsemi
sbn13001.pdf

SBN13002
SBN13002

SBN13001SBN13001SBN13001SBN13001High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem, switching mode power supply.Absolute Maximum RatingsSymbol Parameter T

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: SBC546 | 2N1895 | BCW14K | BFG424W | SBC847CWT1G | FC6357D | 3DA608B

 

 
Back to Top