Справочник транзисторов. SD1434

 

Биполярный транзистор SD1434 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: SD1434
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 175 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 36 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 16 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 200 °C
   Граничная частота коэффициента передачи тока (ft): 470 MHz
   Ёмкость коллекторного перехода (Cc): 130 pf
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: M111

 Аналоги (замена) для SD1434

 

 

SD1434 Datasheet (PDF)

 ..1. Size:73K  st
sd1434.pdf

SD1434
SD1434

SD1434RF & MICROWAVE TRANSISTORSUHF MOBILE APPLICATIONS.470 MHz.12.5 VOLTS.COMMON EMITTER.P 45 W MIN. WITH 5.0 dB GAIN=OUT.500 6LFL (M111)epoxy sealedORDER CODE BRANDINGSD1434 SD1434PIN CONNECTIONDESCRIPTIONThe SD1434 is a 12.5 V Class C epitaxial siliconNPN planar transistor designed primarily for UHFcommunications. This device utilizes diffused emit-1. Coll

 ..2. Size:88K  njs
sd1434.pdf

SD1434
SD1434

 9.1. Size:36K  st
sd1439.pdf

SD1434
SD1434

SD1439RF & MICROWAVE TRANSISTORSUHF TV/LINEAR APPLICATIONS.860 MHz.COMMON EMITTER.GOLD METALLIZATION.CLASS A LINEAR OPERATION.P = 0.5 W MIN. WITH 9.5 dB GAINOUT.280 4L STUD (M122)epoxy sealedORDER CODE BRANDINGSD1439 TCC596PIN CONNECTIONDESCRIPTIONThe SD1439 is a silicon NPN bipolar device spe-cifically designed for high linearity applications inthe UHF frequen

 9.2. Size:441K  st
sd1433.pdf

SD1434
SD1434

SD1433RF POWER BIPOLAR TRANSISTORSUHF MOBILE APPLICATIONSFEATURES SUMMARY Figure 1. Package 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER POUT = 10 W MIN. WITH 8.0 dB GAIN DESCRIPTION.280 4L STUD (M122)The SD1433 is a Class C epitaxial silicon NPN pla-epoxy sealednar transistor designed for driver applications inthe 450 - 512 MHz fre

 9.3. Size:34K  st
sd1437.pdf

SD1434
SD1434

SD1437RF & MICROWAVE TRANSISTORSUHF TV/LINEAR APPLICATIONS.860 MHz.COMMON EMITTER.GOLD METALLIZATION.CLASS A LINEAR OPERATION.P = 2 W MIN. WITH 8.5 dB GAINOUT.280 4L STUD (M122)epoxy sealedORDER CODEBRANDINGSD1437TCC593PIN CONNECTIONDESCRIPTIONThe SD1437 is a silicon NPN bipolar device spe-cifically designed for high linearity applications inthe UHF frequen

 9.4. Size:100K  toshiba
2sd1438.pdf

SD1434
SD1434

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.5. Size:49K  toshiba
2sd1430.pdf

SD1434

This Material Copyrighted By Its Respective Manufacturer

 9.6. Size:100K  panasonic
2sd1439.pdf

SD1434
SD1434

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.7. Size:320K  hitachi
2sd1435k.pdf

SD1434
SD1434

 9.8. Size:34K  hitachi
2sd1436.pdf

SD1434
SD1434

2SD1436(K)Silicon NPN Triple DiffusedApplicationPower switching complementary pair with 2SB1032(K)OutlineTO-3P211. Base2. Collector(Flange)3. Emitter 1.5 k 130 (Typ) (Typ)13232SD1436(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VE

 9.9. Size:69K  wingshing
2sd1437.pdf

SD1434

2SD1437 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB1033ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25 PC 40 W Juncti

 9.10. Size:28K  wingshing
2sd1432.pdf

SD1434

NPN TRIPLE DIFFUSED2SD1432 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC

 9.11. Size:28K  wingshing
2sd1431.pdf

SD1434

NPN TRIPLE DIFFUSED2SD1431 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC

 9.12. Size:27K  wingshing
2sd1433.pdf

SD1434

NPN TRIPLE DIFFUSED2SD1433 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS (No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) I

 9.13. Size:209K  inchange semiconductor
2sd1437.pdf

SD1434
SD1434

isc Silicon NPN Power Transistor 2SD1437DESCRIPTIONCollector-Emitter Breakdown Voltage:V = 60V(Min)(BR)CEOComplement to Type 2SB1033Low Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 9.14. Size:215K  inchange semiconductor
2sd1439.pdf

SD1434
SD1434

isc Silicon NPN Power Transistor 2SD1439DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNI

 9.15. Size:191K  inchange semiconductor
2sd1430.pdf

SD1434
SD1434

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1430DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 9.16. Size:190K  inchange semiconductor
2sd1432.pdf

SD1434
SD1434

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1432DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 9.17. Size:89K  inchange semiconductor
2sd1435.pdf

SD1434
SD1434

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1435 DESCRIPTION With TO-3PN package DARLINGTON High DC current gain Complement to type 2SB1031 APPLICATIONS For low frequency power amplifier and high current switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline

 9.18. Size:216K  inchange semiconductor
2sd1436.pdf

SD1434
SD1434

isc Silicon NPN Darlington Power Transistor 2SD1436DESCRIPTIONHigh DC Current Gain: h = 1000(Min.)@ I = 5A, V = 3VFE C CECollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB1032Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATI

 9.19. Size:215K  inchange semiconductor
2sd1431.pdf

SD1434
SD1434

isc Silicon NPN Power Transistor 2SD1431DESCRIPTIONHigh Speedt = 1.0 us(MIN) @ I = 4A , I = 0.8Af C B(end)High VoltageV =1300VCBOLow Saturation VoltageV

 9.20. Size:190K  inchange semiconductor
2sd1433.pdf

SD1434
SD1434

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1433DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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