All Transistors. SD1434 Datasheet

 

SD1434 Datasheet and Replacement


   Type Designator: SD1434
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 16 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 470 MHz
   Collector Capacitance (Cc): 130 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: M111
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SD1434 Datasheet (PDF)

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SD1434

SD1434RF & MICROWAVE TRANSISTORSUHF MOBILE APPLICATIONS.470 MHz.12.5 VOLTS.COMMON EMITTER.P 45 W MIN. WITH 5.0 dB GAIN=OUT.500 6LFL (M111)epoxy sealedORDER CODE BRANDINGSD1434 SD1434PIN CONNECTIONDESCRIPTIONThe SD1434 is a 12.5 V Class C epitaxial siliconNPN planar transistor designed primarily for UHFcommunications. This device utilizes diffused emit-1. Coll

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SD1434

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SD1434

SD1439RF & MICROWAVE TRANSISTORSUHF TV/LINEAR APPLICATIONS.860 MHz.COMMON EMITTER.GOLD METALLIZATION.CLASS A LINEAR OPERATION.P = 0.5 W MIN. WITH 9.5 dB GAINOUT.280 4L STUD (M122)epoxy sealedORDER CODE BRANDINGSD1439 TCC596PIN CONNECTIONDESCRIPTIONThe SD1439 is a silicon NPN bipolar device spe-cifically designed for high linearity applications inthe UHF frequen

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SD1434

SD1433RF POWER BIPOLAR TRANSISTORSUHF MOBILE APPLICATIONSFEATURES SUMMARY Figure 1. Package 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER POUT = 10 W MIN. WITH 8.0 dB GAIN DESCRIPTION.280 4L STUD (M122)The SD1433 is a Class C epitaxial silicon NPN pla-epoxy sealednar transistor designed for driver applications inthe 450 - 512 MHz fre

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC5541 | GES4928 | 2SB1184R | SUR544J | 2SC74 | 2SC3991K

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