All Transistors. SD1434 Datasheet

 

SD1434 Transistor. Datasheet pdf. Equivalent

Type Designator: SD1434

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 16 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 470 MHz

Collector Capacitance (Cc): 130 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: M111

SD1434 Transistor Equivalent Substitute - Cross-Reference Search

SD1434 Datasheet (PDF)

1.1. sd1434.pdf Size:88K _update

SD1434
SD1434



1.2. sd1434.pdf Size:73K _st

SD1434
SD1434

SD1434 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS .470 MHz .12.5 VOLTS .COMMON EMITTER .P 45 W MIN. WITH 5.0 dB GAIN = OUT .500 6LFL (M111) epoxy sealed ORDER CODE BRANDING SD1434 SD1434 PIN CONNECTION DESCRIPTION The SD1434 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes diffused emit- 1. Collect

5.1. sd1439.pdf Size:36K _update

SD1434
SD1434

SD1439 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS .860 MHz .COMMON EMITTER .GOLD METALLIZATION .CLASS A LINEAR OPERATION .P = 0.5 W MIN. WITH 9.5 dB GAIN OUT .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1439 TCC596 PIN CONNECTION DESCRIPTION The SD1439 is a silicon NPN bipolar device spe- cifically designed for high linearity applications in the UHF frequen

5.2. sd1439.pdf Size:33K _st

SD1434
SD1434

SD1439 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS .860 MHz .COMMON EMITTER .GOLD METALLIZATION .CLASS A LINEAR OPERATION .P = 0.5 W MIN. WITH 9.5 dB GAIN OUT .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1439 TCC596 PIN CONNECTION DESCRIPTION The SD1439 is a silicon NPN bipolar device spe- cifically designed for high linearity applications in the UHF frequency

5.3. sd1437.pdf Size:34K _st

SD1434
SD1434

SD1437 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS .860 MHz .COMMON EMITTER .GOLD METALLIZATION .CLASS A LINEAR OPERATION .P = 2 W MIN. WITH 8.5 dB GAIN OUT .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1437 TCC593 PIN CONNECTION DESCRIPTION The SD1437 is a silicon NPN bipolar device spe- cifically designed for high linearity applications in the UHF frequency

5.4. sd1433.pdf Size:441K _st

SD1434
SD1434

SD1433 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY Figure 1. Package 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER POUT = 10 W MIN. WITH 8.0 dB GAIN DESCRIPTION .280 4L STUD (M122) The SD1433 is a Class C epitaxial silicon NPN pla- epoxy sealed nar transistor designed for driver applications in the 450 - 512 MHz frequency range. T

5.5. 2sd1430.pdf Size:49K _toshiba

SD1434

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5.6. 2sd1438.pdf Size:100K _toshiba

SD1434
SD1434

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.7. 2sd1439.pdf Size:100K _panasonic

SD1434
SD1434

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.8. 2sd1436.pdf Size:34K _hitachi

SD1434
SD1434

2SD1436(K) Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB1032(K) Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1.5 k? 130 ? (Typ) (Typ) 1 3 2 3 2SD1436(K) Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V C

5.9. 2sd1435k.pdf Size:320K _hitachi

SD1434
SD1434

5.10. 2sd1431.pdf Size:28K _wingshing

SD1434

NPN TRIPLE DIFFUSED 2SD1431 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 5

5.11. 2sd1432.pdf Size:28K _wingshing

SD1434

NPN TRIPLE DIFFUSED 2SD1432 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 6

5.12. 2sd1433.pdf Size:27K _wingshing

SD1434

NPN TRIPLE DIFFUSED 2SD1433 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 5

5.13. 2sd1437.pdf Size:69K _wingshing

SD1434

2SD1437 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB1033 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25? PC 40 W ? ? ? Junction Temperature Tj 1

5.14. 2sd1439.pdf Size:53K _inchange_semiconductor

SD1434
SD1434

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1439 DESCRIPTION ·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500

5.15. 2sd1431.pdf Size:92K _inchange_semiconductor

SD1434
SD1434

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1431 DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color TV and CRT display horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitte

5.16. 2sd1430.pdf Size:92K _inchange_semiconductor

SD1434
SD1434

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1430 DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter Absolute maxi

5.17. 2sd1432.pdf Size:92K _inchange_semiconductor

SD1434
SD1434

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1432 DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in TV and CRT display horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter Abs

5.18. 2sd1433.pdf Size:92K _inchange_semiconductor

SD1434
SD1434

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1433 DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in TV and CRT horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter Absolute m

5.19. 2sd1435.pdf Size:89K _inchange_semiconductor

SD1434
SD1434

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1435 DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type 2SB1031 APPLICATIONS ·For low frequency power amplifier and high current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO

5.20. 2sd1436.pdf Size:258K _inchange_semiconductor

SD1434
SD1434

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1436 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 5A, VCE= 3V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Complement to Type 2SB1032 APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE

5.21. 2sd1437.pdf Size:238K _inchange_semiconductor

SD1434
SD1434

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1437 DESCRIPTION ·Collector-Emitter Breakdown Voltage :V(BR)CEO= 60V(Min) ·Complement to Type 2SB1033 ·Low Collector Saturation Voltage APPLICATIONS ·Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80

Datasheet: SD1275 , SD1275-01 , SD1285 , SD1405 , SD1407 , SD1420 , SD1422 , SD1429 , BD135 , SD1439 , SD1446 , SD1448 , SD1455 , SD1458 , SD1459 , SD1460 , SD1462 .

 


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