SD1487. Аналоги и основные параметры
Наименование производителя: SD1487
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 290 W
Макcимально допустимое напряжение коллектор-база (Ucb): 36 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 18 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 20 A
Предельная температура PN-перехода (Tj): 200 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 30 MHz
Ёмкость коллекторного перехода (Cc): 400 pf
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: SOT123
Аналоги (замена) для SD1487
- подборⓘ биполярного транзистора по параметрам
SD1487 даташит
..1. Size:63K st
sd1487.pdf 
SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS .30 MHz .12.5 VOLTS .IMD -30 dB .COMMON EMITTER .GOLD METALLIZATION .P 100 WMIN. WITH 12.0 dB GAIN = OUT .500 4LFL (M174) epoxy sealed ORDER CODE BRANDING SD1487 SD1487 PIN CONNECTION DESCRIPTION The SD1487 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device uti
0.2. Size:214K inchange semiconductor
2sd1487.pdf 
isc Silicon NPN Power Transistor 2SD1487 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max)@I = 5A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1056 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V
9.1. Size:102K st
sd1488.pdf 
SD1488 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY Figure 1. Package 470 MHz 12.5 VOLTS EFFICIENCY 50% COMMON EMITTER POUT = 38 W MIN. WITH 5.8 dB GAIN DESCRIPTION The SD1488 is a 12.5 V Class C epitaxial silicon .500 6L FL (M111) NPN planar transistor designed primarily for broadband applications in the 450 - 512 MHz land epoxy sealed
9.2. Size:66K st
sd1489.pdf 
SD1489 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS .470 - 860 MHz .28 VOLTS .CLASS AB PUSH PULL .DESIGNED FOR HIGH POWER LINEAR OPERATION .HIGH SATURATED POWER CAPABILITY .GOLD METALLIZATION .438 x .450 2LFL (M173) .DIFFUSED EMITTER BALLAST epoxy sealed RESISTORS ORDER CODE BRANDING .COMMON EMITTER CONFIGURATION SD1489 SD1489 .INTERNAL INPUT MATCHING .P 50 W MIN. WITH 6.
9.3. Size:78K st
sd1480.pdf 
SD1480 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS .136 - 175 MHz .28 VOLTS .EFFICIENCY 55% .COMMON EMITTER .GOLD METALLIZATION .INTERNAL INPUT MATCHING .P 125 W MIN. WITH 9.2 dB GAIN OUT = .500 6LFL (M111) epoxy sealed ORDER CODE BRANDING SD1480 SD1480 PIN CONNECTION DESCRIPTION The SD1480 is a common emitter 28 V Class C epitaxial silicon NPN planar transistor designed prim
9.4. Size:107K nec
2sd1481.pdf 
DATA SHEET SILICON POWER TRANSISTOR 2SD1481 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) On-chip C-to-B Zener diode for surge voltage absorption Low collector saturation voltage VCE(SAT) = 1.5 V MAX. (at 1 A) Ideal for use in a direct drive from IC to the devices such
9.6. Size:977K rohm
2sd1949fra 2sd1484kfra.pdf 
Data Sheet AEC-Q101 Qualified Medium Power Transistor (50V,0.5A) 2SD1949FRA / 2SD1484KFRA 2SD1949 / 2SD1484K Features Dimensions (Unit mm) 1) High current.(IC=0.5A) UMT3 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. (SC-70) (1) Emitter (2) Bace (3) Collector Absolute maximum rationgs (Ta=25 C) SMT3 (SC-59) Parameter Symbol Limits Unit
9.7. Size:106K rohm
2sd1949 2sd1949 2sd1484k.pdf 
Data Sheet Medium Power Transistor (50V,0.5A) M e d i u m P o w e r T r a n s i s t o r ( 5 0 V , 0 . 5 A ) 2SD1949 / 2SD1484K 2 S D 1 9 4 9 2 S D 1 4 8 4 K Features Dimensions (Unit mm) 1) High current.(IC=0.5A) UMT3 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. (SC-70) (1) Emitter (2) Bace (3) C
9.9. Size:1672K rohm
2sd1949 2sd1484k.pdf 
2SD1949 / 2SD1484K Datasheet Middle Power Transistor (50V, 500mA) lOutline l Parameter Value SOT-323 SOT-346 VCEO 50V IC 500mA 2SD1949 2SD1484K (UMT3) (SMT3) lFeatures lInner circuit l l 1)High current. (IC=0.5A) 2)Low VCE(sat) VCE(sat) 400mV at IC=150mA/IB=15
9.11. Size:44K panasonic
2sd1485.pdf 
Power Transistors 2SD1485 Silicon NPN triple diffusion planar type For high power amplification Unit mm Complementary to 2SB1054 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 Extremely satisfactory linearity of the forward current transfer ratio hFE 3.2 0.1 Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat sink
9.12. Size:46K panasonic
2sd1480.pdf 
Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Unit mm Complementary to 2SB1052 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High forward current transfer ratio hFE which has satisfactory linearity 3.1 0.1 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one
9.14. Size:23K hitachi
2sd1489.pdf 
2SD1489 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1058 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD1489 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO 6V Collector current IC 2A Collec
9.15. Size:83K cdil
csd1489.pdf 
IS / IECQC 700000 IS / IECQC 750100 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSD1489 TO-92 BCE Low Frequency Power Amplifier. Complementary CSB1058 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage BVCBO 20 V Collector Emitter
9.16. Size:161K syntez microelectronics
sd1480.pdf 
SD1480 SILICON BIPOLAR NPN RF POWER TRANSISTOR ___________ ___________________________________ The silicon bipolar n-p-n transistor. Common Emitter from 136 to 175 MHz Applications Features Gold metallization with barrier realizes very stable characteristics and excellent lifetime Diffused emitter ballast resistors Internal Input Matching Output power 125 W Power gain 9,
9.17. Size:210K inchange semiconductor
2sd1481.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1481 DESCRIPTION On-chip C-to-B Zener diode for surge voltage absorption Low Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 1A CE(sat) C High DC Current Gain h = 2000(Min) @I = 1A FE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation
9.18. Size:215K inchange semiconductor
2sd1488.pdf 
isc Silicon NPN Power Transistor 2SD1488 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max)@I = 7A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1057 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V
9.19. Size:214K inchange semiconductor
2sd1485.pdf 
isc Silicon NPN Power Transistor 2SD1485 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max)@I = 3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1054 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V
9.20. Size:215K inchange semiconductor
2sd1480.pdf 
isc Silicon NPN Power Transistor 2SD1480 DESCRIPTION Low Collector Saturation Voltage V = 2.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB1052 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications.
9.21. Size:214K inchange semiconductor
2sd1486.pdf 
isc Silicon NPN Power Transistor 2SD1486 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max)@I = 4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1055 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V
Другие транзисторы: SD1446, SD1448, SD1455, SD1458, SD1459, SD1460, SD1462, SD1480, TIP31, SD1489, SD1490, SD1536-03, SD1540, SD1726, SD1728, SD1729, SD1730
