SD1487 Datasheet and Replacement

SD1487RF & MICROWAVE TRANSISTORSHF SSB APPLICATIONS.30 MHz.12.5 VOLTS.IMD -30 dB.COMMON EMITTER.GOLD METALLIZATION.P 100 WMIN. WITH 12.0 dB GAIN=OUT.500 4LFL (M174)epoxy sealedORDER CODE BRANDINGSD1487 SD1487PIN CONNECTIONDESCRIPTIONThe SD1487 is a 12.5 V Class C epitaxial siliconNPN planar transistor designed primarily for HFcommunications. This device uti

isc Silicon NPN Power Transistor 2SD1487DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max)@I = 5ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1056Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

SD1488RF POWER BIPOLAR TRANSISTORSUHF MOBILE APPLICATIONSFEATURES SUMMARY Figure 1. Package 470 MHz 12.5 VOLTS EFFICIENCY 50% COMMON EMITTER POUT = 38 W MIN. WITH 5.8 dB GAIN DESCRIPTIONThe SD1488 is a 12.5 V Class C epitaxial silicon.500 6L FL (M111)NPN planar transistor designed primarily forbroadband applications in the 450 - 512 MHz land epoxy sealed

SD1489RF & MICROWAVE TRANSISTORSTV/LINEAR APPLICATIONS.470 - 860 MHz.28 VOLTS.CLASS AB PUSH PULL.DESIGNED FOR HIGH POWER LINEAROPERATION.HIGH SATURATED POWER CAPABILITY.GOLD METALLIZATION.438 x .450 2LFL (M173).DIFFUSED EMITTER BALLASTepoxy sealedRESISTORSORDER CODE BRANDING.COMMON EMITTER CONFIGURATIONSD1489 SD1489.INTERNAL INPUT MATCHING.P 50 W MIN. WITH 6.

SD1480RF & MICROWAVE TRANSISTORSVHF APPLICATIONS.136 - 175 MHz.28 VOLTS.EFFICIENCY 55%.COMMON EMITTER.GOLD METALLIZATION.INTERNAL INPUT MATCHING.P 125 W MIN. WITH 9.2 dB GAINOUT =.500 6LFL (M111)epoxy sealedORDER CODE BRANDINGSD1480 SD1480PIN CONNECTIONDESCRIPTIONThe SD1480 is a common emitter 28 V Class Cepitaxial silicon NPN planar transistor designedprim

DATA SHEETSILICON POWER TRANSISTOR2SD1481NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) On-chip C-to-B Zener diode for surge voltage absorption Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) Ideal for use in a direct drive from IC to the devices such

Data SheetAEC-Q101 QualifiedMedium Power Transistor (50V,0.5A)2SD1949FRA / 2SD1484KFRA2SD1949 / 2SD1484KFeatures Dimensions (Unit : mm)1) High current.(IC=0.5A)UMT32) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.(SC-70)(1) Emitter(2) Bace(3) CollectorAbsolute maximum rationgs (Ta=25 C)SMT3(SC-59)Parameter Symbol Limits Unit

Data SheetMedium Power Transistor (50V,0.5A)MediumPowerTransistor(50V,0.5A)2SD1949 / 2SD1484K2SD19492SD1484KFeatures Dimensions (Unit : mm)1) High current.(IC=0.5A)UMT32) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.(SC-70)(1) Emitter(2) Bace(3) C

2SD1949 / 2SD1484K / 2SC1741STransistorsTransistors2SC3359S(96-678-D15)(SPEC-D16)318

2SD1949 / 2SD1484KDatasheetMiddle Power Transistor (50V, 500mA)lOutlinelParameter Value SOT-323 SOT-346VCEO50VIC500mA 2SD1949 2SD1484K(UMT3) (SMT3) lFeatures lInner circuitl l1)High current. (IC=0.5A)2)Low VCE(sat) VCE(sat)400mV at IC=150mA/IB=15

Power Transistors2SD1485Silicon NPN triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SB105415.0 0.3 5.0 0.2Features11.0 0.2 3.2Extremely satisfactory linearity of the forward current transferratio hFE 3.2 0.1Wide area of safe operation (ASO)High transition frequency fTFull-pack package which can be installed to the heat sink

Power Transistors2SD1480Silicon NPN triple diffusion planar typeFor power amplificationUnit: mmComplementary to 2SB105210.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features High forward current transfer ratio hFE which has satisfactorylinearity 3.1 0.1 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink withone

2SD1489Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB1058OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SD1489Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 16 VEmitter to base voltage VEBO 6VCollector current IC 2ACollec

IS / IECQC 700000IS / IECQC 750100Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON TRANSISTOR CSD1489TO-92BCELow Frequency Power Amplifier.Complementary CSB1058ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage BVCBO 20 VCollector Emitter

SD1480 SILICON BIPOLAR NPN RF POWER TRANSISTOR ___________ ___________________________________The silicon bipolar n-p-n transistor. Common Emitter from 136 to 175 MHz Applications Features: Gold metallization with barrier realizes verystable characteristics and excellent lifetime Diffused emitter ballast resistors Internal Input Matching Output power: 125 W Power gain: 9,

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1481DESCRIPTIONOn-chip C-to-B Zener diode for surge voltage absorptionLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 1ACE(sat) CHigh DC Current Gain: h = 2000(Min) @I = 1AFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation

isc Silicon NPN Power Transistor 2SD1488DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max)@I = 7ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1057Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

isc Silicon NPN Power Transistor 2SD1485DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max)@I = 3ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1054Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

isc Silicon NPN Power Transistor 2SD1480DESCRIPTIONLow Collector Saturation Voltage: V = 2.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB1052Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.

isc Silicon NPN Power Transistor 2SD1486DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max)@I = 4ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1055Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V