All Transistors. SD1487 Datasheet

 

SD1487 Transistor. Datasheet pdf. Equivalent

Type Designator: SD1487

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 290 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 400 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: SOT123

SD1487 Transistor Equivalent Substitute - Cross-Reference Search

SD1487 Datasheet (PDF)

1.1. sd1487.pdf Size:72K _update

SD1487
SD1487



1.2. sd1487.pdf Size:63K _st

SD1487
SD1487

SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS .30 MHz .12.5 VOLTS .IMD -30 dB .COMMON EMITTER .GOLD METALLIZATION .P 100 WMIN. WITH 12.0 dB GAIN = OUT .500 4LFL (M174) epoxy sealed ORDER CODE BRANDING SD1487 SD1487 PIN CONNECTION DESCRIPTION The SD1487 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utiliz

1.3. 2sd1487.pdf Size:39K _panasonic

SD1487

1.4. 2sd1487.pdf Size:263K _inchange_semiconductor

SD1487
SD1487

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1487 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@IC= 5A ·Wide Area of Safe Operation ·Complement to Type 2SB1056 APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage

Datasheet: SD1446 , SD1448 , SD1455 , SD1458 , SD1459 , SD1460 , SD1462 , SD1480 , TIP31C , SD1489 , SD1490 , SD1536-03 , SD1540 , SD1726 , SD1728 , SD1729 , SD1730 .

 


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