SD1490 - описание и поиск аналогов

 ..1. Size:91K  st
 sd1490.pdf 

SD1490 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS .470 - 860 MHz .28 VOLTS .CLASS A PUSH PULL .DESIGNED FOR HIGH POWER LINEAR OPERATION .HIGH SATURATED POWER CAPABILITY .GOLD METALLIZATION .438 x .450 2LFL (M173) .DIFFUSED EMITTER BALLAST epoxy sealed RESISTORS ORDER CODE BRANDING .COMMON EMITTER CONFIGURATION SD1490 SD1490 .INTERNAL INPUT MATCHING .P 25 W MIN. WITH 9.0

 ..2. Size:195K  syntez microelectronics
 sd1490.pdf 

SD1490 SILICON NPN MICROWAVE POWER TRANSISTOR 25 W, in the 470 860 MHz Range ________________________________________________ The silicon n-p-n transistor is designed for Class A High Linearity Amplifier Applications in TV Band IV&V Transmitters. Features Power Gain 8 dB Min Output Power 25 W IMD3 -45 dBc Max Absolute Maximum Ratings Parameters Sym Value Unit Coll

 0.1. Size:23K  hitachi
 2sd1490.pdf 

2SD1490 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1059 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD1490 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 70 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 6V Collector current IC 1A Collec

 9.1. Size:97K  st
 sd1492.pdf 

SD1492 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS .470 - 860 MHz .28 VOLTS .CLASS AB PUSH PULL .DESIGNED FOR HIGH POWER CAPABILITY .GOLD METALLIZATION .DIFFUSED EMITTER BALLAST 2 x .437 x .450 2LFL (M175) RESISTORS epoxy sealed .COMMON EMITTER CONFIGURATION ORDER CODE BRANDING .INTERNAL INPUT MATCHING SD1492 SD1492 .P 150 W MIN. WITH 6.5 dB GAIN = OUT PIN CONNECTION

 9.2. Size:439K  mcc
 2sd1499-p.pdf 

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SD1499-P Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating NPN Silicon Moisure Sensitivity Level 1 Wide Safe Operation Area Power Transistors Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Com

 9.3. Size:44K  panasonic
 2sd1499.pdf 

Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Unit mm Complementary to 2SB1063 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Extremely satisfactory linearity of the forward current transfer 3.1 0.1 ratio hFE Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat

 9.4. Size:51K  no
 2sd1496.pdf 

 9.5. Size:27K  no
 2sd1497.pdf 

 9.6. Size:187K  lge
 2sd1499.pdf 

2SD1499(NPN) TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Extremely satisfactory linearity of the forward current transfer ratio hFE Wide safe operation area High transition frequency fT Full-pack package which can be installed to the heat sink with one screw. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter

 9.7. Size:215K  inchange semiconductor
 2sd1499.pdf 

isc Silicon NPN Power Transistor 2SD1499 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1063 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 9.8. Size:211K  inchange semiconductor
 2sd1494.pdf 

isc Silicon NPN Power Transistor 2SD1494 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO

 9.9. Size:186K  inchange semiconductor
 2sd1492.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1492 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 9.10. Size:211K  inchange semiconductor
 2sd1496.pdf 

isc Silicon NPN Power Transistor 2SD1496 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO

 9.11. Size:212K  inchange semiconductor
 2sd1497.pdf 

isc Silicon NPN Power Transistor 2SD1497 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO

 9.12. Size:210K  inchange semiconductor
 2sd1493.pdf 

isc Silicon NPN Power Transistor 2SD1493 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO

 9.13. Size:210K  inchange semiconductor
 2sd1495.pdf 

isc Silicon NPN Power Transistor 2SD1495 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO