MRF10502 datasheet и подбор замены

 ..1. Size:182K  macom
 mrf10502.pdf 

MRF10502 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 500W (peak), 1025 1150MHz Product Image Designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed performance @ 1090 MHz Output power = 500 W peak Gain = 8.5 dB min, 9.0 dB (typ.) 100% tested for load

 7.1. Size:104K  motorola
 mrf10500 mrf10501.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10500/D The RF Line Microwave Pulse MRF10500 Power Transistors MRF10501 . . . designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak 500 W (PEAK) Gain = 8.5 dB Min, 9.0 dB (Typ) 1025 115

 7.2. Size:104K  motorola
 mrf10500.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10500/D The RF Line Microwave Pulse MRF10500 Power Transistors MRF10501 . . . designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak 500 W (PEAK) Gain = 8.5 dB Min, 9.0 dB (Typ) 1025 115

 9.1. Size:100K  motorola
 mrf1035mbrev0.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1035MB/D The RF Line Microwave Pulse MRF1035MB Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak 35 W (PEAK), 960 1215 MHz Minimum Gain = 10 dB MIC

 9.2. Size:54K  motorola
 mrf1030r.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1030/D The RF Line UHF Power Transistor MRF1030 . . . designed primarily for wideband, large signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics Output Power 3.0 Watts Power Gain 7.5 dB Min, Class AB 3.0 W, TO 1

 9.3. Size:55K  motorola
 mrf1032.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1032/D The RF Line UHF Power Transistor MRF1032 . . . designed primarily for large signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics Output Power 6.0 Watts Power Gain 6.5 dB Min, Class AB 6.0 W, TO 1.0 GHz LI

 9.4. Size:104K  motorola
 mrf1090ma mrf1090mb.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1090MA/D The RF Line Microwave Pulse MRF1090MA Power Transistors MRF1090MB Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak 90 W PEAK, 960 1215 MHz Minimum Gain = 8.4 dB MICROWAVE

 9.5. Size:110K  motorola
 mrf1015m.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1015MA/D The RF Line Microwave Pulse MRF1015MA Power Transistors MRF1015MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak 15 W (PEAK), 960 1215 MHz Minimum

 9.6. Size:110K  motorola
 mrf1015ma mrf1015mb.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1015MA/D The RF Line Microwave Pulse MRF1015MA Power Transistors MRF1015MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak 15 W (PEAK), 960 1215 MHz Minimum

 9.7. Size:97K  motorola
 mrf1004m.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1004MA/D The RF Line Microwave Pulse MRF1004MA Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak 4.0 W, 960 1215 MHz Minimum Gain = 10 dB MICROWAV

 9.8. Size:55K  motorola
 mrf1029r.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1029/D The RF Line UHF Power Transistor MRF1029 . . . designed primarily for wideband, large signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics Output Power 1.5 Watts Power Gain 8.0 dB Min, Class AB 1.5 W, TO 1

 9.9. Size:98K  motorola
 mrf10120.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10120/D The RF Line Microwave Long Pulse MRF10120 Power Transistor Designed for 960 1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak 120 W (PEAK), 960 1215 MHz Gain = 8.0 dB Min., 9.2 dB (Typ)

 9.10. Size:108K  motorola
 mrf1000m.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1000MA/D The RF Line Microwave Pulse MRF1000MA Power Transistors MRF1000MB . . . designed for Class A and AB common emitter amplifier applications in the low power stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc Class A Output Power = 0.2 Watt 0.7 W, 96

 9.11. Size:113K  motorola
 mrf1035m.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1035MA/D The RF Line Microwave Pulse MRF1035MA Power Transistors MRF1035MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak 35 W (PEAK), 960 1215 MHz Minimum

 9.12. Size:106K  motorola
 mrf1090m.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1090MA/D The RF Line Microwave Pulse MRF1090MA Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak 90 W PEAK, 960 1215 MHz Minimum Gain = 8.4 dB MICROWAVE POWER

 9.13. Size:109K  motorola
 mrf1002ma mrf1002mb.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1002MA/D The RF Line Microwave Pulse MRF1002MA Power Transistors MRF1002MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak 2.0 W (PEAK), 960 1215 MHz Minimu

 9.14. Size:55K  motorola
 mrf1032r.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1032/D The RF Line UHF Power Transistor MRF1032 . . . designed primarily for large signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics Output Power 6.0 Watts Power Gain 6.5 dB Min, Class AB 6.0 W, TO 1.0 GHz LI

 9.15. Size:90K  motorola
 mrf10150.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10150/D The RF Line Microwave Pulse MRF10150 Power Transistor . . . designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak 150 W (PEAK) Gain = 9.5 dB Min, 10.0 dB (Typ) 1025 1150 MHz MIC

 9.16. Size:100K  motorola
 mrf10005.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10005/D The RF Line Microwave Power Transistor MRF10005 . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW Minimum Gain = 8.5 d

 9.17. Size:97K  motorola
 mrf10070.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10070/D The RF Line Microwave Pulse MRF10070 Power Transistor Designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak 70 W (PEAK) Gain = 9.0 dB Min 1025 1150 MHz MICROWAVE POWER 100%

 9.18. Size:55K  motorola
 mrf1029.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1029/D The RF Line UHF Power Transistor MRF1029 . . . designed primarily for wideband, large signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics Output Power 1.5 Watts Power Gain 8.0 dB Min, Class AB 1.5 W, TO 1

 9.19. Size:54K  motorola
 mrf1031r.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1031/D The RF Line UHF Power Transistor MRF1031 . . . designed primarily for wideband, large signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics Output Power 4.5 Watts Power Gain 7.0 dB Min, Class AB 4.5 W, TO 1

 9.20. Size:100K  motorola
 mrf1035mb.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1035MB/D The RF Line Microwave Pulse MRF1035MB Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak 35 W (PEAK), 960 1215 MHz Minimum Gain = 10 dB MIC

 9.21. Size:97K  motorola
 mrf1004ma.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1004MA/D The RF Line Microwave Pulse MRF1004MA Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak 4.0 W, 960 1215 MHz Minimum Gain = 10 dB MICROWAV

 9.22. Size:54K  motorola
 mrf1031.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1031/D The RF Line UHF Power Transistor MRF1031 . . . designed primarily for wideband, large signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics Output Power 4.5 Watts Power Gain 7.0 dB Min, Class AB 4.5 W, TO 1

 9.23. Size:104K  motorola
 mrf1090marev8.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1090MA/D The RF Line Microwave Pulse MRF1090MA Power Transistors MRF1090MB Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak 90 W PEAK, 960 1215 MHz Minimum Gain = 8.4 dB MICROWAVE

 9.24. Size:106K  motorola
 mrf1090ma.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1090MA/D The RF Line Microwave Pulse MRF1090MA Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak 90 W PEAK, 960 1215 MHz Minimum Gain = 8.4 dB MICROWAVE POWER

 9.25. Size:101K  motorola
 mrf10350.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10350/D The RF Line Microwave Pulse MRF10350 Power Transistor Designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak 350 W (PEAK) Gain = 8.5 dB Min, 9.0 dB (Typ) 1025 1150 MHz MICROWAVE

 9.26. Size:109K  motorola
 mrf1002m.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1002MA/D The RF Line Microwave Pulse MRF1002MA Power Transistors MRF1002MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak 2.0 W (PEAK), 960 1215 MHz Minimu

 9.27. Size:108K  motorola
 mrf1000ma mrf1000mb.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1000MA/D The RF Line Microwave Pulse MRF1000MA Power Transistors MRF1000MB . . . designed for Class A and AB common emitter amplifier applications in the low power stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc Class A Output Power = 0.2 Watt 0.7 W, 96

 9.28. Size:101K  motorola
 mrf10031.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10031/D The RF Line Microwave Long Pulse MRF10031 Power Transistor Designed for 960 1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode S transmitters. Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak 30 W (PEAK) Minimum Gain = 9.0 dB Min (9.5 dB Typ) 960

 9.29. Size:54K  motorola
 mrf1030.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1030/D The RF Line UHF Power Transistor MRF1030 . . . designed primarily for wideband, large signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics Output Power 3.0 Watts Power Gain 7.5 dB Min, Class AB 3.0 W, TO 1

 9.30. Size:113K  motorola
 mrf1035ma mrf1035mb.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1035MA/D The RF Line Microwave Pulse MRF1035MA Power Transistors MRF1035MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak 35 W (PEAK), 960 1215 MHz Minimum

 9.31. Size:166K  macom
 mrf10120.pdf 

MRF10120 Microwave Long Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 120W (peak), 960 1215MHz Product Image Designed for 960 1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. Guaranteed performance @ 1.215 GHz, 36 Vdc Output power = 120 W Peak Gain = 7.6 dB min., 8 .5 dB (typ.) 100% test

 9.32. Size:181K  macom
 mrf10150.pdf 

MRF10150 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 150W (peak), 1025 1150MHz Product Image Designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed performance @ 1090 MHz Output power = 150 W Peak Gain = 9.5 dB min, 10.0 dB (typ.) 100% tested for loa

 9.33. Size:193K  macom
 mrf10005.pdf 

MRF10005 Microwave Power Silicon Bipolar Transistor M/A-COM Products Released - Rev. 053007 5.0 W, 960 1215 MHz, 28V Features Product Image Guaranteed performance @1.215GHz, 28Vdc Output power 5.0W CW Minimum gain = 8.5dB, 10.3dB (Typ.) RF performance curves for 28 Vdc and 36 Vdc opera- tion 100% tested for load mismatch at all phase angles with 10

 9.34. Size:164K  macom
 mrf1000mb.pdf 

MRF1000MB Class A, Class AB Microwave Power Silicon NPN Transistor M/A-COM Products Released - Rev. 053007 0.7 W, 960 1215 MHz, 18V Features Product Image Guaranteed performance @ 1090 MHz, 18 Vdc Class A Output power 0.2W Minimum gain 10dB 100% tested for load mismatch at all phase angles with 10 1 VSWR Industry standard package Nitride

 9.35. Size:183K  macom
 mrf10350.pdf 

MRF10350 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 350W (peak), 1025 1150MHz Product Image Designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed performance @ 1090 MHz Output power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (typ.) 100% tested for load

 9.36. Size:164K  macom
 mrf1004mb.pdf 

MRF1004MB Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 4.0W (peak), 960 1215MHz Product Image Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed performance @ 1090 MHz, 35 Vdc Output power = 4.0 W Peak Minimum gain = 10 dB 100% Tested fo

 9.37. Size:189K  macom
 mrf10031.pdf 

MRF10031 Microwave Power Silicon NPN Transistor M/A-COM Products Released - Rev. 05.30.07 30W (peak), 960 1215MHz, 36V Features Product Image Guaranteed performance @ 960-1215MHz, 36Vdc Output power 30W peak Minimum gain 9.0dB min., 9.5dB typ. 100% tested for load mismatch at all phase angles with 10 1 VSWR Hermetically sealed, industry standard pac

 9.38. Size:304K  microsemi
 mrf1001a.pdf 

MRF1001 PCB 24 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE (215) 631-9840 FAX (215) 631-9855 MRF1001A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To-39 packaged VHF/UHF Transistor Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA, 1. Emitter G 2. Base U max = 11.5 dB (typ) @

 9.39. Size:180K  hgsemi
 mrf1090mb.pdf 

HG RF POWER TRANSISTOR MRF1090MB Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB 100% Tested for Load Mismatch at All Phase Angles with 10 1 VSWR Industry Sta

 9.40. Size:238K  hgsemi
 mrf1015mb.pdf 

HG RF POWER TRANSISTOR MRF1015MB Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10 1

 9.41. Size:241K  hgsemi
 mrf1004ma.pdf 

HG RF POWER TRANSISTOR MRF1004MA Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .280 4L STUD The HG MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES Class B and C Operation Common Base PG = 10 dB at 4.0 W/1090 MHz Omnigold Metalization System MAXIMUM RATINGS IC 250 mA VCE

 9.42. Size:255K  hgsemi
 mrf1090ma.pdf 

HG RF POWER TRANSISTOR MRF1090MA Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB 100% Tested for Load Mismatch at All Phase Angles with 10 1 VSWR Industry Sta

 9.43. Size:341K  hgsemi
 mrf1015ma.pdf 

MRF1015MA Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak 15 W (PEAK), 960 1215 MHz Minimum Gain = 10 dB MICROWAVE POWER 100% Tested for Load Mismatch at All

 9.44. Size:240K  hgsemi
 mrf1002ma.pdf 

HG RF POWER TRANSISTOR MRF1002MA Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10 1

 9.45. Size:240K  hgsemi
 mrf1002mb.pdf 

HG RF POWER TRANSISTOR MRF1002MB Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10 1