MRF10502 Datasheet and Replacement

MRF10502 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 500W (peak), 10251150MHz Product Image Designed for 10251150 MHz pulse common base amplifier applications such as TCAS, TACAN and ModeS transmitters. Guaranteed performance @ 1090 MHz Output power = 500 W peak Gain = 8.5 dB min, 9.0 dB (typ.) 100% tested for load

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10500/DThe RF LineMicrowave PulseMRF10500Power TransistorsMRF10501. . . designed for 10251150 MHz pulse common base amplifier applicationssuch as TCAS, TACAN and ModeS transmitters. Guaranteed Performance @ 1090 MHzOutput Power = 500 Watts Peak500 W (PEAK)Gain = 8.5 dB Min, 9.0 dB (Typ)1025115

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10500/DThe RF LineMicrowave PulseMRF10500Power TransistorsMRF10501. . . designed for 10251150 MHz pulse common base amplifier applicationssuch as TCAS, TACAN and ModeS transmitters. Guaranteed Performance @ 1090 MHzOutput Power = 500 Watts Peak500 W (PEAK)Gain = 8.5 dB Min, 9.0 dB (Typ)1025115

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MB/DThe RF LineMicrowave PulseMRF1035MBPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum Gain = 10 dBMIC

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1030/DThe RF LineUHF Power TransistorMRF1030. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 3.0 WattsPower Gain 7.5 dB Min, Class AB3.0 W, TO 1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1032/DThe RF LineUHF Power TransistorMRF1032. . . designed primarily for largesignal output and driver amplifier stages to1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 6.0 WattsPower Gain 6.5 dB Min, Class AB6.0 W, TO 1.0 GHzLI

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1090MA/DThe RF LineMicrowave PulseMRF1090MAPower TransistorsMRF1090MBDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts Peak90 W PEAK, 9601215 MHzMinimum Gain = 8.4 dBMICROWAVE

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1015MA/DThe RF LineMicrowave PulseMRF1015MAPower TransistorsMRF1015MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 15 Watts Peak15 W (PEAK), 9601215 MHzMinimum

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1015MA/DThe RF LineMicrowave PulseMRF1015MAPower TransistorsMRF1015MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 15 Watts Peak15 W (PEAK), 9601215 MHzMinimum

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1004MA/DThe RF LineMicrowave PulseMRF1004MAPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 4.0 Watts Peak4.0 W, 9601215 MHzMinimum Gain = 10 dBMICROWAV

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1029/DThe RF LineUHF Power TransistorMRF1029. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 1.5 WattsPower Gain 8.0 dB Min, Class AB1.5 W, TO 1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10120/DThe RF LineMicrowave Long PulseMRF10120Power TransistorDesigned for 9601215 MHz long pulse common base amplifier applicationssuch as JTIDS and Mode S transmitters. Guaranteed Performance @ 1.215 GHz, 36 VdcOutput Power = 120 Watts Peak120 W (PEAK), 9601215 MHzGain = 8.0 dB Min., 9.2 dB (Typ)

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1000MA/DThe RF LineMicrowave PulseMRF1000MAPower TransistorsMRF1000MB. . . designed for Class A and AB common emitter amplifier applications in thelowpower stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc Class AOutput Power = 0.2 Watt0.7 W, 96

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MA/DThe RF LineMicrowave PulseMRF1035MAPower TransistorsMRF1035MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1090MA/DThe RF LineMicrowave PulseMRF1090MAPower TransistorsDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts Peak90 W PEAK, 9601215 MHzMinimum Gain = 8.4 dBMICROWAVE POWER

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1002MA/DThe RF LineMicrowave PulseMRF1002MAPower TransistorsMRF1002MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 2.0 Watts Peak2.0 W (PEAK), 9601215 MHzMinimu

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1032/DThe RF LineUHF Power TransistorMRF1032. . . designed primarily for largesignal output and driver amplifier stages to1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 6.0 WattsPower Gain 6.5 dB Min, Class AB6.0 W, TO 1.0 GHzLI

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10150/DThe RF LineMicrowave PulseMRF10150Power Transistor. . . designed for 10251150 MHz pulse common base amplifier applicationssuch as TCAS, TACAN and ModeS transmitters. Guaranteed Performance @ 1090 MHzOutput Power = 150 Watts Peak150 W (PEAK)Gain = 9.5 dB Min, 10.0 dB (Typ)10251150 MHzMIC

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10005/DThe RF LineMicrowave Power TransistorMRF10005. . . designed for CW and long pulsed common base amplifier applications,such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at highoverall duty cycles. Guaranteed Performance @ 1.215 GHz, 28 VdcOutput Power = 5.0 Watts CWMinimum Gain = 8.5 d

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10070/DThe RF LineMicrowave PulseMRF10070Power TransistorDesigned for 10251150 MHz pulse common base amplifier applicationssuch as TCAS, TACAN and ModeS transmitters. Guaranteed Performance @ 1090 MHzOutput Power = 70 Watts Peak70 W (PEAK)Gain = 9.0 dB Min1025 1150 MHzMICROWAVE POWER 100%

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1029/DThe RF LineUHF Power TransistorMRF1029. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 1.5 WattsPower Gain 8.0 dB Min, Class AB1.5 W, TO 1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1031/DThe RF LineUHF Power TransistorMRF1031. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 4.5 WattsPower Gain 7.0 dB Min, Class AB4.5 W, TO 1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MB/DThe RF LineMicrowave PulseMRF1035MBPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum Gain = 10 dBMIC

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1004MA/DThe RF LineMicrowave PulseMRF1004MAPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 4.0 Watts Peak4.0 W, 9601215 MHzMinimum Gain = 10 dBMICROWAV

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1031/DThe RF LineUHF Power TransistorMRF1031. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 4.5 WattsPower Gain 7.0 dB Min, Class AB4.5 W, TO 1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1090MA/DThe RF LineMicrowave PulseMRF1090MAPower TransistorsMRF1090MBDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts Peak90 W PEAK, 9601215 MHzMinimum Gain = 8.4 dBMICROWAVE

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1090MA/DThe RF LineMicrowave PulseMRF1090MAPower TransistorsDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts Peak90 W PEAK, 9601215 MHzMinimum Gain = 8.4 dBMICROWAVE POWER

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10350/DThe RF LineMicrowave PulseMRF10350Power TransistorDesigned for 10251150 MHz pulse common base amplifier applicationssuch as TCAS, TACAN and ModeS transmitters. Guaranteed Performance @ 1090 MHzOutput Power = 350 Watts Peak350 W (PEAK)Gain = 8.5 dB Min, 9.0 dB (Typ)10251150 MHzMICROWAVE

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1002MA/DThe RF LineMicrowave PulseMRF1002MAPower TransistorsMRF1002MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 2.0 Watts Peak2.0 W (PEAK), 9601215 MHzMinimu

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1000MA/DThe RF LineMicrowave PulseMRF1000MAPower TransistorsMRF1000MB. . . designed for Class A and AB common emitter amplifier applications in thelowpower stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc Class AOutput Power = 0.2 Watt0.7 W, 96

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10031/DThe RF LineMicrowave Long PulseMRF10031Power TransistorDesigned for 9601215 MHz long or short pulse common base amplifierapplications such as JTIDS and ModeS transmitters. Guaranteed Performance @ 960 MHz, 36 VdcOutput Power = 30 Watts Peak30 W (PEAK)Minimum Gain = 9.0 dB Min (9.5 dB Typ)960

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1030/DThe RF LineUHF Power TransistorMRF1030. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 3.0 WattsPower Gain 7.5 dB Min, Class AB3.0 W, TO 1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MA/DThe RF LineMicrowave PulseMRF1035MAPower TransistorsMRF1035MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum

MRF10120 Microwave Long Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 120W (peak), 9601215MHz Product Image Designed for 9601215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. Guaranteed performance @ 1.215 GHz, 36 Vdc Output power = 120 W Peak Gain = 7.6 dB min., 8 .5 dB (typ.) 100% test

MRF10150 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 150W (peak), 10251150MHz Product Image Designed for 10251150 MHz pulse common base amplifier applications such as TCAS, TACAN and ModeS transmitters. Guaranteed performance @ 1090 MHz Output power = 150 W Peak Gain = 9.5 dB min, 10.0 dB (typ.) 100% tested for loa

MRF10005 Microwave Power Silicon Bipolar Transistor M/A-COM Products Released - Rev. 053007 5.0 W, 9601215 MHz, 28V Features Product Image Guaranteed performance @1.215GHz, 28Vdc Output power: 5.0W CW Minimum gain = 8.5dB, 10.3dB (Typ.) RF performance curves for 28 Vdc and 36 Vdc opera-tion 100% tested for load mismatch at all phase angles with 10:

MRF1000MB Class A, Class AB Microwave Power Silicon NPN Transistor M/A-COM Products Released - Rev. 053007 0.7 W, 9601215 MHz, 18V Features Product Image Guaranteed performance @ 1090 MHz, 18 Vdc Class A Output power: 0.2W Minimum gain: 10dB 100% tested for load mismatch at all phase angles with 10:1 VSWR Industry standard package Nitride

MRF10350 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 350W (peak), 10251150MHz Product Image Designed for 10251150 MHz pulse common base amplifier applications such as TCAS, TACAN and ModeS transmitters. Guaranteed performance @ 1090 MHz Output power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (typ.) 100% tested for load

MRF1004MB Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 4.0W (peak), 9601215MHz Product Image Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed performance @ 1090 MHz, 35 Vdc Output power = 4.0 W Peak Minimum gain = 10 dB 100% Tested fo

MRF10031 Microwave Power Silicon NPN Transistor M/A-COM Products Released - Rev. 05.30.07 30W (peak), 9601215MHz, 36V Features Product Image Guaranteed performance @ 960-1215MHz, 36Vdc Output power: 30W peak Minimum gain: 9.0dB min., 9.5dB typ. 100% tested for load mismatch at all phase angles with 10:1 VSWR Hermetically sealed, industry standard pac

MRF1001 PCB24140 COMMERCE DRIVEMONTGOMERYVILLE, PA18936-1013PHONE: (215) 631-9840FAX: (215) 631-9855MRF1001ARF & MICROWAVE DISCRETELOW POWER TRANSISTORSFeatures Silicon NPN, To-39 packaged VHF/UHF Transistor Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA,1. EmitterG2. Base U max = 11.5 dB (typ) @

HG RF POWER TRANSISTORMRF1090MBSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts PeakMinimum Gain = 8.4 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry Sta

HG RF POWER TRANSISTORMRF1015MBSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 15 Watts PeakMinimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1

HG RF POWER TRANSISTORMRF1004MASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION: PACKAGE STYLE .280 4L STUD The HG MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: Class B and C Operation Common Base PG = 10 dB at 4.0 W/1090 MHz Omnigold Metalization SystemMAXIMUM RATINGS IC 250 mA VCE

HG RF POWER TRANSISTORMRF1090MASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts PeakMinimum Gain = 8.4 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry Sta

MRF1015MASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 15 Watts Peak15 W (PEAK), 960 1215 MHzMinimum Gain = 10 dBMICROWAVE POWER 100% Tested for Load Mismatch at All

HG RF POWER TRANSISTORMRF1002MASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 2.0 Watts PeakMinimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1

HG RF POWER TRANSISTORMRF1002MBSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 2.0 Watts PeakMinimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1