Биполярный транзистор MRF247 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MRF247
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 250 W
Макcимально допустимое напряжение коллектор-база (Ucb): 36 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 18 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 20 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 175 MHz
Ёмкость коллекторного перехода (Cc): 235 pf
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: 316-01
MRF247 Datasheet (PDF)
mrf247.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF247/DThe RF LineNPN SiliconMRF247RF Power Transistor. . . designed for 12.5 Volt VHF largesignal amplifier applications in industrialand commercial FM equipment operating to 175 MHz. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 75 Watts75 W, 175 MHzPower Gain = 7.0 dB MinCONTROLLED Q
mrf247rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF247/DThe RF LineNPN SiliconMRF247RF Power TransistorThe MRF247 is designed for 12.5 Volt VHF largesignal amplifier applicationsin industrial and commercial FM equipment operating to 175 MHz. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 75 Watts75 W, 175 MHzPower Gain = 7.0 dB MinCONT
mrf247re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF247/DThe RF LineNPN SiliconMRF247RF Power Transistor. . . designed for 12.5 Volt VHF largesignal amplifier applications in industrialand commercial FM equipment operating to 175 MHz. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 75 Watts75 W, 175 MHzPower Gain = 7.0 dB MinCONTROLLED Q
mrf240.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF240/DThe RF LineNPN SiliconMRF240RF Power Transistors. . . designed for 13.6 volt VHF largesignal class C and class AB linear poweramplifier applications in commercial and industrial equipment. High Common Emitter Power Gain Specified 13.6 V, 160 MHz Performance:40 W, 145175 MHzOutput Power = 40 W
mrf240re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF240/DThe RF LineNPN SiliconMRF240RF Power Transistors. . . designed for 13.6 volt VHF largesignal class C and class AB linear poweramplifier applications in commercial and industrial equipment. High Common Emitter Power Gain Specified 13.6 V, 160 MHz Performance:40 W, 145175 MHzOutput Power = 40 W
mrf240.pdf
ELEFLOW TECHNOLOGIES MRF240www.eleflow.com NPN Silicon RF power transistor MRF240 Description: MRF240 is designed for 13.6V VHF largesignal class C and class AB linear power amplifier applications in commercial and industrial equipment. Features: Specified 13.6 V, 160 MHz Performance: Output Power = 40 Watts Power Gain = 9.0 dB Min Efficiency = 55% Min Maximum Ratings
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050