MRF247 Datasheet and Replacement
Type Designator: MRF247
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 175 MHz
Collector Capacitance (Cc): 235 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: 316-01
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MRF247 Datasheet (PDF)
mrf247.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF247/DThe RF LineNPN SiliconMRF247RF Power Transistor. . . designed for 12.5 Volt VHF largesignal amplifier applications in industrialand commercial FM equipment operating to 175 MHz. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 75 Watts75 W, 175 MHzPower Gain = 7.0 dB MinCONTROLLED Q
mrf247rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF247/DThe RF LineNPN SiliconMRF247RF Power TransistorThe MRF247 is designed for 12.5 Volt VHF largesignal amplifier applicationsin industrial and commercial FM equipment operating to 175 MHz. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 75 Watts75 W, 175 MHzPower Gain = 7.0 dB MinCONT
mrf247re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF247/DThe RF LineNPN SiliconMRF247RF Power Transistor. . . designed for 12.5 Volt VHF largesignal amplifier applications in industrialand commercial FM equipment operating to 175 MHz. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 75 Watts75 W, 175 MHzPower Gain = 7.0 dB MinCONTROLLED Q
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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