MSB1218A-RT1G datasheet, аналоги, основные параметры

Наименование производителя: MSB1218A-RT1G  📄📄 

Маркировка: BR

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 45 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 210

Корпус транзистора: SOT323

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MSB1218A-RT1G даташит

 ..1. Size:119K  onsemi
 msb1218a-rt1g.pdf pdf_icon

MSB1218A-RT1G

MSB1218A--RT1G PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC--70/SOT--323 package which is designed for low power surface http //onsemi.com mount applications. COLLECTOR Features 3 High hFE, 210 -- 460 Low VCE(sat),

 2.1. Size:117K  onsemi
 msb1218a-rt1-d.pdf pdf_icon

MSB1218A-RT1G

MSB1218A--RT1G PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC--70/SOT--323 package which is designed for low power surface http //onsemi.com mount applications. COLLECTOR Features 3 High hFE, 210 -- 460 Low VCE(sat),

 2.2. Size:119K  onsemi
 msb1218a-rt1.pdf pdf_icon

MSB1218A-RT1G

MSB1218A--RT1G PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC--70/SOT--323 package which is designed for low power surface http //onsemi.com mount applications. COLLECTOR Features 3 High hFE, 210 -- 460 Low VCE(sat),

 6.1. Size:156K  motorola
 msb1218a.pdf pdf_icon

MSB1218A-RT1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MSB1218A RT1/D PNP Silicon General Purpose MSB1218A-RT1 Amplifier Transistor MSB1218A-ST1 This PNP Silicon Epitaxial Planar Transistor is designed for general purpose Motorola Preferred Devices amplifier applications. This device is housed in the SC 70/SOT 323 package which is designed for low power surface mount appl

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MS1649, MS2202, MS2203, MS2204, MS8050-H, MS8050-L, MSA1162GT1G, MSB1218A-RT1, S9014, MSB92ASWT1G, MSB92AWT1G, MSB92T1G, MSB92WT1G, MSC2712GT1G, MSD1819A-R, MSD1819A-RT1G, MSD42