MSB1218A-RT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: MSB1218A-RT1G
SMD Transistor Code: BR
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 210
Noise Figure, dB: -
Package: SOT323
MSB1218A-RT1G Transistor Equivalent Substitute - Cross-Reference Search
MSB1218A-RT1G Datasheet (PDF)
msb1218a-rt1g.pdf
MSB1218A--RT1GPNP Silicon GeneralPurpose AmplifierTransistorThis PNP Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC--70/SOT--323 package which is designed for low power surfacehttp://onsemi.commount applications.COLLECTORFeatures3 High hFE, 210 -- 460 Low VCE(sat),
msb1218a-rt1-d.pdf
MSB1218A--RT1GPNP Silicon GeneralPurpose AmplifierTransistorThis PNP Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC--70/SOT--323 package which is designed for low power surfacehttp://onsemi.commount applications.COLLECTORFeatures3 High hFE, 210 -- 460 Low VCE(sat),
msb1218a-rt1.pdf
MSB1218A--RT1GPNP Silicon GeneralPurpose AmplifierTransistorThis PNP Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC--70/SOT--323 package which is designed for low power surfacehttp://onsemi.commount applications.COLLECTORFeatures3 High hFE, 210 -- 460 Low VCE(sat),
msb1218a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MSB1218ART1/DPNP Silicon General PurposeMSB1218A-RT1Amplifier TransistorMSB1218A-ST1This PNP Silicon Epitaxial Planar Transistor is designed for general purposeMotorola Preferred Devicesamplifier applications. This device is housed in the SC70/SOT323 packagewhich is designed for low power surface mount appl
msb1218a rt1g.pdf
MSB1218A--RT1GPNP Silicon GeneralPurpose AmplifierTransistorThis PNP Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC--70/SOT--323 package which is designed for low power surfacehttp://onsemi.commount applications.COLLECTORFeatures3 High hFE, 210 -- 460 Low VCE(sat),
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
