Биполярный транзистор MT3S106FS
Даташит. Аналоги
Наименование производителя: MT3S106FS
Маркировка: 41
Тип материала: SiGe
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.1
W
Макcимально допустимое напряжение коллектор-база (Ucb): 13
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 6
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 1
V
Макcимальный постоянный ток коллектора (Ic): 0.08
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 8500
MHz
Ёмкость коллекторного перехода (Cc): 0.5
pf
Статический коэффициент передачи тока (hfe): 110
Корпус транзистора: SOT923F
- подбор биполярного транзистора по параметрам
MT3S106FS
Datasheet (PDF)
..1. Size:119K toshiba
mt3s106fs.pdf 
MT3S106FS TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT3S106FS VCO Oscilletor Stage Unit:mmVHF-UHF Low Noise Amplifier Application 1.00.050.80.05Features Low Noise Figure :NF=1.2dB (@f=2GHz) High Gain:|S21e|2=10dB (@f=2GHz) 1320.10.05 0.10.05Marking 2 3 4 1 1 Absolute Maximum Ratings (Ta = 25C) 1.BASE Character
9.1. Size:171K toshiba
mt3s19.pdf 
MT3S19 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mmFeatures Low-Noise Figure:NF=1.5 dB (typ.) (@ f=1 GHz) High Gain:|S21e|2=12.5 dB (typ.) (@ f=1 GHz) Marking 3 1. Base2. EmitterT 6 3. Collector1 2 S-Mini JEDEC TO-236 JEITA SC-59TOSHIBA 2-3F1AAbsolute Maximum Ratings (T
9.2. Size:161K toshiba
mt3s111 .pdf 
MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mmFeatures Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz) High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking 1. BaseR 5 2. Emitter3. CollectorS-Mini JEDEC TO-236JEITA SC-59Absolute Maximum Ratings (Ta = 25C) T
9.3. Size:201K toshiba
mt3s113.pdf 
MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mmFEATURES Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base2. Emitter3. CollectorS-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25C)
9.4. Size:156K toshiba
mt3s111tu .pdf 
MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm2.10.11.70.1Features Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz) 1 High Gain: |S21e|2=12.5 dB (typ.) (@ f=1 GHz) 32 Marking 3 1. BASE R 5 2. EMITTER 3. COLLECTOR 1 2 UFM JEDEC -JEITA -Ab
9.5. Size:161K toshiba
mt3s19r.pdf 
MT3S19R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.080.42+0.08-0.050.170.05M A -0.07FEATURES 3 Low Noise Figure:NF=1.5dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=13dB(Typ.) (@ f=1GHz) 120.95 0.952.90.2A Marking 3 T 6 1. Base2. Emitter3. Collector
9.6. Size:186K toshiba
mt3s16u.pdf 
MT3S16U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16U Unit: mm UHF Band Oscillator and Amplifier Applications fT is high and current dependability is excellent. The characteristic of Reverse transfer capacitance (Cre) is flat. :NF = 2.4dB(Typ.) (@ 2V, 5mA, 1 GHz) :|S21e|2 = 4.5dB(Typ.) (@ 2V, 10mA, 1 GHz) Marking 3 Type Name T 4 1.Base 2.E
9.7. Size:162K toshiba
mt3s19tu.pdf 
MT3S19TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19TU VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm2.10.11.70.1Features Low-Noise Figure : NF = 1.5 dB (typ.) (@ f = 1 GHz) 1 High Gain : |S21e|2=13 dB (typ.) (@ f = 1 GHz) 32Marking 3 1.BASE T 6 2.EMITTER 3.COLLECTOR1 2 UFM JEDEC -JEITA -TOSHIBA 2-2U1BAbs
9.8. Size:148K toshiba
mt3s11fs.pdf 
MT3S11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11FS Unit: mmVHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications Superior performance in oscillator applications. 1 Superior noise characteristics 3:NF = 2.4 dB, |S21e|2 = 3.5 dB (f =2GHz) 2 0.80.050.10.05 1.00.050.10.05Absolute Maximum Ratings (Ta = 25
9.9. Size:161K toshiba
mt3s111p.pdf 
MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mmFeatures Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz) High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz) Marking R 5 PW-Mini JEDEC JEITA SC-62Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-5K1AWeight:0.05 g (typ.
9.10. Size:273K toshiba
mt3s111tu.pdf 
MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.10.11.70.1Features Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz) 1 High Gain: |S21e|2=12.5 dB (typ.) (@ f=1 GHz) 32 Marking 3 1. BASE R 5 2. EMITTER 3. COLLECTOR 1 2 UFM JEDEC - JEITA -
9.11. Size:203K toshiba
mt3s113 .pdf 
MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mmFEATURES Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base2. Emitter3. CollectorS-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25C)
9.12. Size:159K toshiba
mt3s111.pdf 
MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mmFeatures Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz) High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking 1. BaseR 5 2. Emitter3. CollectorS-Mini JEDEC TO-236JEITA SC-59Absolute Maximum Ratings (Ta = 25C) T
9.13. Size:197K toshiba
mt3s113p.pdf 
MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mmFEATURES Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz) High Gain:|S21e|2 = 10.5dB (typ.) (@ f=1GHz) Marking R 7 Pw-Mini JEDEC -JEITA SC-62Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-5K1A Weight : 0.05 g
9.14. Size:176K toshiba
mt3s113tu.pdf 
MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm2.10.11.70.1FEATURES Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) 1 High Gain:|S21e|2=12.5dB(Typ.) (@ f=1GHz) 2 3 Marking 3 1. 1. Base2. 2. EmitterR 7 3. 3
9.15. Size:163K toshiba
mt3s111p .pdf 
MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mmFeatures Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz) High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz) Marking R 5 PW-Mini JEDEC JEITA SC-62Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-5K1AWeight:0.05 g (typ.
9.16. Size:178K toshiba
mt3s113tu .pdf 
MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm2.10.11.70.1FEATURES Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) 1 High Gain:|S21e|2=12.5dB(Typ.) (@ f=1GHz) 2 3 Marking 3 1. 1. Base2. 2. EmitterR 7 3. 3
9.17. Size:170K toshiba
mt3s15tu.pdf 
MT3S15TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S15TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm2.10.11.70.1Features Low-Noise Figure: NF=1.6 dB (typ.) (@ f=1 GHz) 1 High Gain: |S21e|2=13.5 dB (typ.) (@ f=1 GHz) 32 Marking 3 1. BASE 2. EMITTER T 3 3. COLLECTOR UFM 1 2 JEDEC JEITA TOSHIBA 2-2U
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History: BD402
| 40968
| MRF9411BLT3
| BFR71
| 41501
| MRF342
