MT3S106FS datasheet, аналоги, основные параметры
Наименование производителя: MT3S106FS 📄📄
Маркировка: 41
Тип материала: SiGe
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 13 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 6 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 1 V
Макcимальный постоянный ток коллектора (Ic): 0.08 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 8500 MHz
Ёмкость коллекторного перехода (Cc): 0.5 pf
Статический коэффициент передачи тока (hFE): 110
Корпус транзистора: SOT923F
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Аналоги (замена) для MT3S106FS
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MT3S106FS даташит
..1. Size:119K toshiba
mt3s106fs.pdf 
MT3S106FS TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT3S106FS VCO Oscilletor Stage Unit mm VHF-UHF Low Noise Amplifier Application 1.0 0.05 0.8 0.05 Features Low Noise Figure NF=1.2dB (@f=2GHz) High Gain S21e 2=10dB (@f=2GHz) 1 3 2 0.1 0.05 0.1 0.05 Marking 2 3 4 1 1 Absolute Maximum Ratings (Ta = 25 C) 1.BASE Character
9.1. Size:171K toshiba
mt3s19.pdf 
MT3S19 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm Features Low-Noise Figure NF=1.5 dB (typ.) (@ f=1 GHz) High Gain S21e 2=12.5 dB (typ.) (@ f=1 GHz) Marking 3 1. Base 2. Emitter T 6 3. Collector 1 2 S-Mini JEDEC TO-236 JEITA SC-59 TOSHIBA 2-3F1A Absolute Maximum Ratings (T
9.2. Size:161K toshiba
mt3s111 .pdf 
MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm Features Low-Noise Figure NF=0.9 dB (typ.) (@ f=1 GHz) High Gain S21e 2=12 dB (typ.) (@ f=1 GHz) Marking 1. Base R 5 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25 C) T
9.3. Size:201K toshiba
mt3s113.pdf 
MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm FEATURES Low Noise Figure NF=1.15dB(Typ.) (@ f=1GHz) High Gain S21e 2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25 C)
9.4. Size:156K toshiba
mt3s111tu .pdf 
MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit mm 2.1 0.1 1.7 0.1 Features Low-Noise Figure NF=0.85 dB (typ.) (@ f=1 GHz) 1 High Gain S21e 2=12.5 dB (typ.) (@ f=1 GHz) 3 2 Marking 3 1. BASE R 5 2. EMITTER 3. COLLECTOR 1 2 UFM JEDEC - JEITA - Ab
9.5. Size:161K toshiba
mt3s19r.pdf 
MT3S19R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm +0.08 0.42 +0.08 -0.05 0.17 0.05 M A -0.07 FEATURES 3 Low Noise Figure NF=1.5dB(Typ.) (@ f=1GHz) High Gain S21e 2=13dB(Typ.) (@ f=1GHz) 1 2 0.95 0.95 2.9 0.2 A Marking 3 T 6 1. Base 2. Emitter 3. Collector
9.6. Size:186K toshiba
mt3s16u.pdf 
MT3S16U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16U Unit mm UHF Band Oscillator and Amplifier Applications fT is high and current dependability is excellent. The characteristic of Reverse transfer capacitance (Cre) is flat. NF = 2.4dB(Typ.) (@ 2V, 5mA, 1 GHz) S21e 2 = 4.5dB(Typ.) (@ 2V, 10mA, 1 GHz) Marking 3 Type Name T 4 1.Base 2.E
9.7. Size:162K toshiba
mt3s19tu.pdf 
MT3S19TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19TU VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm 2.1 0.1 1.7 0.1 Features Low-Noise Figure NF = 1.5 dB (typ.) (@ f = 1 GHz) 1 High Gain S21e 2=13 dB (typ.) (@ f = 1 GHz) 3 2 Marking 3 1.BASE T 6 2.EMITTER 3.COLLECTOR 1 2 UFM JEDEC - JEITA - TOSHIBA 2-2U1B Abs
9.9. Size:161K toshiba
mt3s111p.pdf 
MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm Features Low-Noise Figure NF=0.95 dB (typ.) (@f=1 GHz) High Gain S21e 2=10.5 dB (typ.) (@f=1 GHz) Marking R 5 PW-Mini JEDEC JEITA SC-62 Absolute Maximum Ratings (Ta = 25 C) TOSHIBA 2-5K1A Weight 0.05 g (typ.
9.10. Size:273K toshiba
mt3s111tu.pdf 
MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit mm 2.1 0.1 1.7 0.1 Features Low-Noise Figure NF=0.85 dB (typ.) (@ f=1 GHz) 1 High Gain S21e 2=12.5 dB (typ.) (@ f=1 GHz) 3 2 Marking 3 1. BASE R 5 2. EMITTER 3. COLLECTOR 1 2 UFM JEDEC - JEITA -
9.11. Size:203K toshiba
mt3s113 .pdf 
MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm FEATURES Low Noise Figure NF=1.15dB(Typ.) (@ f=1GHz) High Gain S21e 2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25 C)
9.12. Size:159K toshiba
mt3s111.pdf 
MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm Features Low-Noise Figure NF=0.9 dB (typ.) (@ f=1 GHz) High Gain S21e 2=12 dB (typ.) (@ f=1 GHz) Marking 1. Base R 5 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25 C) T
9.13. Size:197K toshiba
mt3s113p.pdf 
MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm FEATURES Low Noise Figure NF = 1.15dB (typ.) (@ f=1GHz) High Gain S21e 2 = 10.5dB (typ.) (@ f=1GHz) Marking R 7 Pw-Mini JEDEC - JEITA SC-62 Absolute Maximum Ratings (Ta = 25 C) TOSHIBA 2-5K1A Weight 0.05 g
9.14. Size:176K toshiba
mt3s113tu.pdf 
MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm 2.1 0.1 1.7 0.1 FEATURES Low Noise Figure NF=1.15dB(Typ.) (@ f=1GHz) 1 High Gain S21e 2=12.5dB(Typ.) (@ f=1GHz) 2 3 Marking 3 1. 1. Base 2. 2. Emitter R 7 3. 3
9.15. Size:163K toshiba
mt3s111p .pdf 
MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm Features Low-Noise Figure NF=0.95 dB (typ.) (@f=1 GHz) High Gain S21e 2=10.5 dB (typ.) (@f=1 GHz) Marking R 5 PW-Mini JEDEC JEITA SC-62 Absolute Maximum Ratings (Ta = 25 C) TOSHIBA 2-5K1A Weight 0.05 g (typ.
9.16. Size:178K toshiba
mt3s113tu .pdf 
MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm 2.1 0.1 1.7 0.1 FEATURES Low Noise Figure NF=1.15dB(Typ.) (@ f=1GHz) 1 High Gain S21e 2=12.5dB(Typ.) (@ f=1GHz) 2 3 Marking 3 1. 1. Base 2. 2. Emitter R 7 3. 3
9.17. Size:170K toshiba
mt3s15tu.pdf 
MT3S15TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S15TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit mm 2.1 0.1 1.7 0.1 Features Low-Noise Figure NF=1.6 dB (typ.) (@ f=1 GHz) 1 High Gain S21e 2=13.5 dB (typ.) (@ f=1 GHz) 3 2 Marking 3 1. BASE 2. EMITTER T 3 3. COLLECTOR UFM 1 2 JEDEC JEITA TOSHIBA 2-2U
Другие транзисторы: MSG36E31, MSG36E41, MSG43001, MSG43002, MSG43003, MSG43004, MSG430C4, MSG430D4, 2SC945, MT3S111, MT3S111P, MT3S111TU, MT3S113, MT3S113P, MT3S113TU, MT4S102T, MT4S102U
