All Transistors. MT3S106FS Datasheet

 

MT3S106FS Datasheet, Equivalent, Cross Reference Search

Type Designator: MT3S106FS

SMD Transistor Code: 41

Material of Transistor: SiGe

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 13 V

Maximum Collector-Emitter Voltage |Vce|: 6 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.08 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 8500 MHz

Collector Capacitance (Cc): 0.5 pF

Forward Current Transfer Ratio (hFE), MIN: 110

Noise Figure, dB: -

Package: SOT923F

MT3S106FS Transistor Equivalent Substitute - Cross-Reference Search

 

MT3S106FS Datasheet (PDF)

1.1. mt3s106fs.pdf Size:119K _update

MT3S106FS
MT3S106FS

MT3S106FS TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT3S106FS VCO Oscilletor Stage Unit:mm VHF-UHF Low Noise Amplifier Application 1.0±0.05 0.8±0.05 Features • Low Noise Figure :NF=1.2dB (@f=2GHz) • High Gain:|S21e|2=10dB (@f=2GHz) 1 3 2 0.1±0.05 0.1±0.05 Marking 2 3 4 1 1 Absolute Maximum Ratings (Ta = 25°C) 1.BASE Character

5.1. mt3s111.pdf Size:159K _update

MT3S106FS
MT3S106FS

MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking 1. Base R 5 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25°C) T

5.2. mt3s113.pdf Size:201K _update

MT3S106FS
MT3S106FS

MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25°C)

5.3. mt3s111p.pdf Size:161K _update

MT3S106FS
MT3S106FS

MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz) • High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz) Marking R 5 PW-Mini JEDEC ⎯ JEITA SC-62 Absolute Maximum Ratings (Ta = 25°C) TOSHIBA 2-5K1A Weight:0.05 g (typ.

5.4. mt3s113p.pdf Size:197K _update

MT3S106FS
MT3S106FS

MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz) • High Gain:|S21e|2 = 10.5dB (typ.) (@ f=1GHz) Marking R 7 Pw-Mini JEDEC - JEITA SC-62 Absolute Maximum Ratings (Ta = 25°C) TOSHIBA 2-5K1A Weight : 0.05 g

5.5. mt3s113tu.pdf Size:176K _update

MT3S106FS
MT3S106FS

MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 1.7±0.1 FEATURES • Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) 1 • High Gain:|S21e|2=12.5dB(Typ.) (@ f=1GHz) 2 3 Marking 3 1. ベース 1. Base 2. エミッタ 2. Emitter R 7 3. コレクタ 3

5.6. mt3s11fs.pdf Size:148K _update

MT3S106FS
MT3S106FS

MT3S11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11FS Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • Superior performance in oscillator applications. 1 • Superior noise characteristics 3 :NF = 2.4 dB, |S21e|2 = 3.5 dB (f =2GHz) 2 0.8±0.05 0.1±0.05 1.0±0.05 0.1±0.05 Absolute Maximum Ratings (Ta = 25

5.7. mt3s111tu.pdf Size:153K _update

MT3S106FS
MT3S106FS

MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 1.7±0.1 Features • Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz) 1 • High Gain: |S21e|2=12.5 dB (typ.) (@ f=1 GHz) 3 2 Marking 3 1. BASE R 5 2. EMITTER 3. COLLECTOR 1 2 UFM JEDEC - JEITA - Ab

5.8. mt3s19r 100818.pdf Size:161K _toshiba

MT3S106FS
MT3S106FS

MT3S19R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 0.42 +0.08 -0.05 0.17 0.05?M A -0.07 FEATURES 3 Low Noise Figure:NF=1.5dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=13dB(Typ.) (@ f=1GHz) 1 2 0.95 0.95 2.90.2 A Marking 3 T 6 1. Base 2. Emitter 3. Collector 1 2 SOT23

5.9. mt3s19tu 090331.pdf Size:162K _toshiba

MT3S106FS
MT3S106FS

MT3S19TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19TU VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.10.1 1.70.1 Features Low-Noise Figure : NF = 1.5 dB (typ.) (@ f = 1 GHz) 1 High Gain : |S21e|2=13 dB (typ.) (@ f = 1 GHz) 3 2 Marking 3 1.BASE T 6 2.EMITTER 3.COLLECTOR 1 2 UFM JEDEC - JEITA - TOSHIBA 2-2U1B Absolute Max

5.10. mt3s113tu 091201.pdf Size:178K _toshiba

MT3S106FS
MT3S106FS

MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.10.1 1.70.1 FEATURES Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) 1 High Gain:|S21e|2=12.5dB(Typ.) (@ f=1GHz) 2 3 Marking 3 1. ??? 1. Base 2. ???? 2. Emitter R 7 3. ???? 3. Collector UFM 1 2 JEDEC

5.11. mt3s19 090331.pdf Size:171K _toshiba

MT3S106FS
MT3S106FS

MT3S19 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features Low-Noise Figure:NF=1.5 dB (typ.) (@ f=1 GHz) High Gain:|S21e|2=12.5 dB (typ.) (@ f=1 GHz) Marking 3 1. Base 2. Emitter T 6 3. Collector 1 2 S-Mini JEDEC TO-236 JEITA SC-59 TOSHIBA 2-3F1A Absolute Maximum Ratings (Ta = 25

5.12. mt3s15tu 090331.pdf Size:170K _toshiba

MT3S106FS
MT3S106FS

MT3S15TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S15TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.10.1 1.70.1 Features Low-Noise Figure: NF=1.6 dB (typ.) (@ f=1 GHz) 1 High Gain: |S21e|2=13.5 dB (typ.) (@ f=1 GHz) 3 2 Marking 3 1. BASE 2. EMITTER T 3 3. COLLECTOR UFM 1 2 JEDEC ? JEITA ? TOSHIBA 2-2U1B Weight: 6

5.13. mt3s111 090330.pdf Size:161K _toshiba

MT3S106FS
MT3S106FS

MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz) High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking 1. Base R 5 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2

5.14. mt3s111p 090331.pdf Size:163K _toshiba

MT3S106FS
MT3S106FS

MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz) High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz) Marking R 5 PW-Mini JEDEC ? JEITA SC-62 Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-5K1A Weight:0.05 g (typ.) Charac

5.15. mt3s16u 100825.pdf Size:186K _toshiba

MT3S106FS
MT3S106FS

MT3S16U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16U Unit: mm 0 UHF Band Oscillator and Amplifier Applications fT is high and current dependability is excellent. The characteristic of Reverse transfer capacitance (Cre) is flat. :NF = 2.4dB(Typ.) (@ 2V, 5mA, 1 GHz) :|S21e|2 = 4.5dB(Typ.) (@ 2V, 10mA, 1 GHz) Marking 3 Type Name T 4 1.Base 2.Emitter

5.16. mt3s111tu 090331.pdf Size:156K _toshiba

MT3S106FS
MT3S106FS

MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.10.1 1.70.1 Features Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz) 1 High Gain: |S21e|2=12.5 dB (typ.) (@ f=1 GHz) 3 2 Marking 3 1. BASE R 5 2. EMITTER 3. COLLECTOR 1 2 UFM JEDEC - JEITA - Absolute Ma

5.17. mt3s113 091201.pdf Size:203K _toshiba

MT3S106FS
MT3S106FS

MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25C) TOSHIB

Datasheet: MSG36E31 , MSG36E41 , MSG43001 , MSG43002 , MSG43003 , MSG43004 , MSG430C4 , MSG430D4 , MD1803DFX , MT3S111 , MT3S111P , MT3S111TU , MT3S113 , MT3S113P , MT3S113TU , MT4S102T , MT4S102U .

 


MT3S106FS
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