BD180G datasheet и подбор замены

 ..1. Size:144K  onsemi
 bd180g.pdf 

BD180G Plastic Medium-Power Silicon PNP Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http //onsemi.com Features High DC Current Gain 3.0 AMPERES BD180 is complementary with BD179 POWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant* PNP SILICON 80 VOLTS, 3

 9.1. Size:105K  motorola
 bd180rev.pdf 

Order this document MOTOROLA by BD180/D SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon 3.0 AMPERES PNP Transistor POWER TRANSISTOR PNP SILICON . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing 80 VOLTS complementary or quasi complementary circuits. 30 WATTS DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc

 9.2. Size:40K  fairchild semi
 bd176 bd178 bd180.pdf 

BD176/178/180 Medium Power Linear and Switching Applications Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO *Collector-Base Voltage BD176 - 45 V BD178 - 60 V BD180 - 80 V VCEO Collector-Emitter Voltage BD176 -

 9.3. Size:62K  onsemi
 bd180-d.pdf 

BD180 Plastic Medium Power Silicon PNP Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http //onsemi.com Features DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc 3.0 AMPERES BD180 is complementary with BD179 POWER TRANSISTORS Pb-Free Package is Available* PNP SILICON 80 V

 9.4. Size:217K  cdil
 bd175 bd176 bd177 bd178 bd179 bd180.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BD176 EPITAXIAL SILICON POWER TRANSISTORS BD175 BD178 BD177 BD180 BD179 NPN PNP TO126 Plastic Package E C B Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD175 BD177 BD179 UNIT BD176 BD178 BD180 Collector -Emitter Voltage VCE

 9.5. Size:123K  shantou-huashan
 hsbd180.pdf 

PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD180 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25

 9.6. Size:124K  inchange semiconductor
 bd176 bd178 bd180.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD176 BD178 BD180 DESCRIPTION With TO-126 package Complement to type BD175 /177 /179 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER COND

 9.7. Size:213K  inchange semiconductor
 bd180.pdf 

isc Silicon PNP Power Transistor BD180 DESCRIPTION DC Current Gain- h = 40-250(Min)@ I = -0.15A FE C Collector-Emitter Sustaining Voltage - V = -80V(Min) CEO(SUS) Complement to type BD179 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS