All Transistors. BD180G Datasheet

 

BD180G Datasheet, Equivalent, Cross Reference Search

Type Designator: BD180G

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO225

BD180G Transistor Equivalent Substitute - Cross-Reference Search

 

BD180G Datasheet (PDF)

1.1. bd180g.pdf Size:80K _update

BD180G
BD180G

BD180G Plastic Medium-Power Silicon PNP Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features • High DC Current Gain 3.0 AMPERES • BD180 is complementary with BD179 POWER TRANSISTORS • These Devices are Pb-Free and are RoHS Compliant* PNP SILICON 80 VOLTS, 3

5.1. bd180rev.pdf Size:105K _motorola

BD180G
BD180G

Order this document MOTOROLA by BD180/D SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon 3.0 AMPERES PNP Transistor POWER TRANSISTOR PNP SILICON . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing 80 VOLTS complementary or quasi complementary circuits. 30 WATTS DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc IIIIIIIIIIIIIIIIIIIIIII BD

5.2. bd176 bd178 bd180.pdf Size:40K _fairchild_semi

BD180G
BD180G

BD176/178/180 Medium Power Linear and Switching Applications Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO *Collector-Base Voltage : BD176 - 45 V : BD178 - 60 V : BD180 - 80 V VCEO Collector-Emitter Voltage : BD176 - 45 V

 5.3. bd180-d.pdf Size:62K _onsemi

BD180G
BD180G

BD180 Plastic Medium Power Silicon PNP Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc 3.0 AMPERES BD180 is complementary with BD179 POWER TRANSISTORS Pb-Free Package is Available* PNP SILICON 80 VOLTS, 30

5.4. bd175 bd176 bd177 bd178 bd179 bd180.pdf Size:217K _cdil

BD180G
BD180G

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BD176 EPITAXIAL SILICON POWER TRANSISTORS BD175 BD178 BD177 BD180 BD179 NPN PNP TO126 Plastic Package E C B Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD175 BD177 BD179 UNIT BD176 BD178 BD180 Collector -Emitter Voltage VCEO 4

 5.5. bd176 bd178 bd180.pdf Size:124K _inchange_semiconductor

BD180G
BD180G

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD176 BD178 BD180 DESCRIPTION With TO-126 package Ў¤ Complement to type BD175 /177 /179 APPLICATIONS Ў¤ For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL PARAM

5.6. hsbd180.pdf Size:123K _shantou-huashan

BD180G

PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD180 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation(Tc=25℃)………………

Datasheet: MPQ6502 , MPQ6700 , MPQ7043 , MPQ7053 , MPQ7093 , BD135TG , BD159G , BD179G , TIP122 , BD241CG , BD242BG , BD242CG , BD243CG , BD244BG , BD244CG , BD435G , BD436G .

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