BDW42G - NPN, BDW46G,BDW47G - PNPDarlington ComplementarySilicon Power TransistorsThis series of plastic, medium-power silicon NPN and PNPDarlington transistors are designed for general purpose and low speedhttp://onsemi.comswitching applications.Features15 AMP DARLINGTON High DC Current Gain - hFE = 2500 (typ) @ IC = 5.0 Adc.COMPLEMENTARY SILICON Collector Emitter

Order this documentMOTOROLAby BDW42/DSEMICONDUCTOR TECHNICAL DATANPNBDW42*Darlington ComplementaryPNPSilicon Power TransistorsBDW46. . . designed for general purpose and low speed switching applications. High DC Current Gain hFE = 2500 (typ.) @ IC = 5.0 Adc. BDW47* Collector Emitter Sustaining Voltage @ 30 mAdc:*Motorola Preferred DeviceVCEO(sus) = 80 Vdc (

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR DARLINGTON POWER TRANSISTOR BDW47TO-220Plastic PackageGeneral Purpose and Low Speed Switching ApplicationComplementary BDW42ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT100VCEOCollector-Emitter Voltage V100VCBOCollector-Base Voltage V5.0VEBOEmitt

ST BDW47 PNP Silicon Planar Darlington Power Transistor General purpose and low speed switching application TO-220 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Emitter Voltage -VCEO 100 VCollector Base Voltage -VCBO 100 V Emitter Base Voltage -VEBO 5 VCollector Current Continuous -IC 15 A Base Currentt -IB 0.5 AOTotal P

isc Silicon PNP Darlington Power Transistor BDW47DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = -5AFE CLow Collector Saturation Voltage: V = -2.0V(Max.)@ I = -5.0ACE(sat) C= -3.0V(Max.)@ I = -10ACComplement to Type BDW42Minimum Lot-to-Lot variations for robust deviceperformance and reliable