All Transistors. BDW47G Datasheet

 

BDW47G Datasheet, Equivalent, Cross Reference Search

Type Designator: BDW47G

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 85 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 300 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: TO220

BDW47G Transistor Equivalent Substitute - Cross-Reference Search

 

BDW47G Datasheet (PDF)

1.1. bdw47g.pdf Size:147K _update

BDW47G
BDW47G

BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium-power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed http://onsemi.com switching applications. Features 15 AMP DARLINGTON • High DC Current Gain - hFE = 2500 (typ) @ IC = 5.0 Adc. COMPLEMENTARY SILICON • Collector Emitter

5.1. bdw42 bdw46 bdw47.pdf Size:176K _motorola

BDW47G
BDW47G

Order this document MOTOROLA by BDW42/D SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary PNP Silicon Power Transistors BDW46 . . . designed for general purpose and low speed switching applications. High DC Current Gain hFE = 2500 (typ.) @ IC = 5.0 Adc. BDW47* Collector Emitter Sustaining Voltage @ 30 mAdc: *Motorola Preferred Device VCEO(sus) = 80 Vdc (min.) B

5.2. bdw47.pdf Size:235K _cdil

BDW47G
BDW47G

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR BDW47 TO-220 Plastic Package General Purpose and Low Speed Switching Application Complementary BDW42 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT 100 VCEO Collector-Emitter Voltage V 100 VCBO Collector-Base Voltage V 5.0 VEBO Emitter-

5.3. bdw47.pdf Size:120K _inchange_semiconductor

BDW47G
BDW47G

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDW47 DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type BDW42 Ў¤ DARLINGTON Ў¤ High DC current gain Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For general purpose and low speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION

5.4. stbdw47.pdf Size:481K _semtech

BDW47G
BDW47G

ST BDW47 PNP Silicon Planar Darlington Power Transistor General purpose and low speed switching application TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Emitter Voltage -VCEO 100 V Collector Base Voltage -VCBO 100 V Emitter Base Voltage -VEBO 5 V Collector Current – Continuous -IC 15 A Base Currentt -IB 0.5 A O Total P

Datasheet: BDS29CM3A , BDS29CN2 , BDS29CSMD , BDV64BG , BDV65BG , BDW24B , BDW42G , BDW46G , TIP122 , BDW52B , BDX14A , BDX14S , BDX16A , BDX18A , BDX33BG , BDX33CG , BDX34BG .

 


BDW47G
  BDW47G
  BDW47G
 

social 

LIST

Last Update

BJT: EMT3FHA | EMT3 | EMT2FHA | EMT2 | EMT1FHA | EMT1DXV6T5G | EMT1DXV6T1G | EMT18 | EML22 | ECH8503-TL-H | ECH8502-TL-H | E13005D-213 | E13005-250 | E13005-225 | DXTN26070CY | DXTD882 | DXT696BK | DXT5616U | DXT2014P5 | DXT2012P5 |