BDX53BG datasheet, аналоги, основные параметры
Наименование производителя: BDX53BG 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 60 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Ёмкость коллекторного перехода (Cc): 300 pf
Статический коэффициент передачи тока (hFE): 750
Корпус транзистора: TO220
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Аналоги (замена) для BDX53BG
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BDX53BG даташит
bdx53bg.pdf
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors http //onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage -
bdx53bg bdx53cg bdx54bg bdx54cg.pdf
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1
bdx53b bdx54.pdf
Order this document MOTOROLA by BDX53B/D SEMICONDUCTOR TECHNICAL DATA NPN Plastic Medium-Power BDX53B Complementary Silicon Transistors BDX53C PNP . . . designed for general purpose amplifier and low speed switching applications. BDX54B High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 mAdc BDX54C VCEO(sus) = 80
bdx53bfp.pdf
BDX53BFP SILICON POWER DARLINGTON TRANSISTOR APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING 3 DESCRIPTION 2 1 The BDX53BFP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington T0-220FP configuration mounted in T0-220FP fully molded isolated pa
Другие транзисторы: BDX14A, BDX14S, BDX16A, BDX18A, BDX33BG, BDX33CG, BDX34BG, BDX34CG, 2SC4793, BDX53CG, BDX54BG, BDX54CG, BDX67CECC, BDY27AS, BDY27CX, BDY55X, BDY58A
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