BDX53BG Datasheet. Specs and Replacement

Type Designator: BDX53BG  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 300 pF

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220

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BDX53BG datasheet

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BDX53BG

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors http //onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage - ... See More ⇒

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BDX53BG

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1... See More ⇒

 8.1. Size:169K  motorola

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BDX53BG

Order this document MOTOROLA by BDX53B/D SEMICONDUCTOR TECHNICAL DATA NPN Plastic Medium-Power BDX53B Complementary Silicon Transistors BDX53C PNP . . . designed for general purpose amplifier and low speed switching applications. BDX54B High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 mAdc BDX54C VCEO(sus) = 80 ... See More ⇒

 8.2. Size:86K  st

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BDX53BG

BDX53BFP SILICON POWER DARLINGTON TRANSISTOR APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING 3 DESCRIPTION 2 1 The BDX53BFP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington T0-220FP configuration mounted in T0-220FP fully molded isolated pa... See More ⇒

Detailed specifications: BDX14A, BDX14S, BDX16A, BDX18A, BDX33BG, BDX33CG, BDX34BG, BDX34CG, 2SC4793, BDX53CG, BDX54BG, BDX54CG, BDX67CECC, BDY27AS, BDY27CX, BDY55X, BDY58A

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