BDX53BG Datasheet and Replacement

BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorshttp://onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage -

BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1

Order this documentMOTOROLAby BDX53B/DSEMICONDUCTOR TECHNICAL DATANPNPlastic Medium-PowerBDX53BComplementary SiliconTransistorsBDX53CPNP. . . designed for generalpurpose amplifier and lowspeed switching applications.BDX54B High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 mAdcBDX54CVCEO(sus) = 80

BDX53BFPSILICON POWER DARLINGTON TRANSISTORAPPLICATIONS: GENERAL PURPOSE SWITCHING ANDAMPLIFIER LINEAR AND SWITCHING INDUSTRIALEQUIPMENT FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING3DESCRIPTION 21The BDX53BFP is a silicon Epitaxial-Base NPNpower transistor in monolithic DarlingtonT0-220FPconfiguration mounted in T0-220FP fully moldedisolated pa

BDX53B - BDX53CBDX54B - BDX54CComplementary power Darlington transistorsFeatures Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diodeApplication321 Audio amplifiersTO-220 Linear and switching industrial equipmentDescriptionThe devices are manufactured in planar base island t

BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1

isc Silicon NPN Darlington Power Transistor BDX53BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(sus)High DC Current Gain: h = 750(Min) @I = 3AFE CLow Collector Saturation Voltage: V = 2.0 V(Max) @ I = 3.0 ACE(sat) CComplement to Type BDX54BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDe