SMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeProduct specificationBSS63RSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesSOT23 PNP silicon planar12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -110 VCollector-emitter voltage

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS63LT1/DHigh Voltage TransistorBSS63LT1COLLECTORPNP Silicon31BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 100 VdcCASE 31808, STYLE 6CollectorEmitter Voltage VCER VdcSOT23 (TO236AB)RBE = 10 k 110Collector Current Continuous I

DISCRETE SEMICONDUCTORS DATA SHEETBSS63PNP high-voltage transistorProduct data sheet 2004 Jan 16Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheetPNP high-voltage transistor BSS63FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 100 V).1 base2 emitterAPPLICATIONS3 collector High-voltage general purpose S

DISCRETE SEMICONDUCTORSDATA SHEETdbook, halfpageM3D088BSS63PNP high-voltage transistor1999 Apr 15Product specificationSupersedes data of 1997 Jul 03Philips Semiconductors Product specificationPNP high-voltage transistor BSS63FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 100 V).1 base2 emitterAPPLICATIONS3 collector H

BSS63SMALL SIGNAL PNP TRANSISTORType MarkingBSS63 T3 SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTING2CIRCUITS GENERAL PURPOSE LOW FREQUENCY3APPLICATONS 1 NPN COMPLEMENT IS BSS64SOT-23INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Base Voltage (V = 0) -110 VCBO BE

BSS63CESOT-23BMark: T3PNP General Purpose AmplifierThis device is designed for general purpose amplifier and switchapplications requiring high voltages. Sourced from Process 74.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 100 VVCBO Collector-Base Voltage 110 V3VEBO Emitter-Base Voltage 6.0 VIC

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PNP Silicon AF and Switching Transistors BCX 42BSS 63 For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX 41, BSS 64 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCX 42 DKs Q62702-C1485 B E C SOT-23BSS 63 BMs Q62702-S534Maximum RatingsParameter Symbol Values UnitBSS 63 BCX

BSS63LT1G,NSVBSS63LT1GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASEMAXIMUM RATINGS2EMITTERRating Symbol Value UnitC

BSS63LT1G,NSVBSS63LT1GHigh Voltage TransistorPNP Siliconwww.onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2EMITTERRating Symbol Value UnitColl

BSS63LT1G,NSVBSS63LT1GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASEMAXIMUM RATINGS2EMITTERRating Symbol Value UnitC

BSS63LT1GHigh Voltage TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTORMAXIMUM RATINGS 3Rating Symbol Value Unit1Collector-Emitter Voltage VCEO -100 VdcBASECollector-Emitter Voltage VCER VdcRBE = 10 kW -1102Collector Current - Continuous IC -100 mAdc EMITTERTHERMAL CHARACTERISTICS

SEMICONDUCTOR BSS63TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.EL B LDIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15MAXIMUM RATING (Ta=25 )C 1.30 MAX23 D 0.45+0.15/-0.05CHARACTERISTIC SYMBOL RATING UNITE 2.40+0.30/-0.201G 1.90VCBO -110 VCollector-Base VoltageH 0.95J 0.13+0.10/-0.05VCEO -100 VColl