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SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type Product specification BSS63R SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features SOT23 PNP silicon planar 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -110 V Collector-emitter voltage

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS63LT1/D High Voltage Transistor BSS63LT1 COLLECTOR PNP Silicon 3 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 100 Vdc CASE 318 08, STYLE 6 Collector Emitter Voltage VCER Vdc SOT 23 (TO 236AB) RBE = 10 k 110 Collector Current Continuous I

DISCRETE SEMICONDUCTORS DATA SHEET BSS63 PNP high-voltage transistor Product data sheet 2004 Jan 16 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet PNP high-voltage transistor BSS63 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 100 V). 1 base 2 emitter APPLICATIONS 3 collector High-voltage general purpose S

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BSS63 PNP high-voltage transistor 1999 Apr 15 Product specification Supersedes data of 1997 Jul 03 Philips Semiconductors Product specification PNP high-voltage transistor BSS63 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 100 V). 1 base 2 emitter APPLICATIONS 3 collector H

BSS63 SMALL SIGNAL PNP TRANSISTOR Type Marking BSS63 T3 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING 2 CIRCUITS GENERAL PURPOSE LOW FREQUENCY 3 APPLICATONS 1 NPN COMPLEMENT IS BSS64 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (V = 0) -110 V CBO BE

BSS63 C E SOT-23 B Mark T3 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 100 V VCBO Collector-Base Voltage 110 V 3 VEBO Emitter-Base Voltage 6.0 V IC

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PNP Silicon AF and Switching Transistors BCX 42 BSS 63 For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types BCX 41, BSS 64 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BCX 42 DKs Q62702-C1485 B E C SOT-23 BSS 63 BMs Q62702-S534 Maximum Ratings Parameter Symbol Values Unit BSS 63 BCX

BSS63LT1G, NSVBSS63LT1G High Voltage Transistor PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit C

BSS63LT1G, NSVBSS63LT1G High Voltage Transistor PNP Silicon www.onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Coll

BSS63LT1G, NSVBSS63LT1G High Voltage Transistor PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit C

BSS63LT1G High Voltage Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO -100 Vdc BASE Collector-Emitter Voltage VCER Vdc RBE = 10 kW -110 2 Collector Current - Continuous IC -100 mAdc EMITTER THERMAL CHARACTERISTICS

SEMICONDUCTOR BSS63 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 MAXIMUM RATING (Ta=25 ) C 1.30 MAX 2 3 D 0.45+0.15/-0.05 CHARACTERISTIC SYMBOL RATING UNIT E 2.40+0.30/-0.20 1 G 1.90 VCBO -110 V Collector-Base Voltage H 0.95 J 0.13+0.10/-0.05 VCEO -100 V Coll