MCCMicro Commercial ComponentsTM 2SA1013-R20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1013-OPhone: (818) 701-4933Fax: (818) 701-49392SA1013-YFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili

2SA1013 SOT-89 PNP Transistors3 Features2 High voltage1.Base1 Large continuous collector current capability2.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO -160Collector - Emitter Voltage VCEO -160 VEmitter - Base Voltage VEBO -6Collector Current - Con

MCCMicro Commercial ComponentsTM 2SA1013-R20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1013-OPhone: (818) 701-4933Fax: (818) 701-49392SA1013-YFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili

MCCMicro Commercial ComponentsTM 2SA1013-R20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1013-OPhone: (818) 701-4933Fax: (818) 701-49392SA1013-YFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili

UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTCs advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc.

2SA1013 -1A, -160V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE TO-92L High VoltageVCEO= -160V G H Large Continuous Collector Current Capability 1Emitter 1112Collector 22 Complementary to 2SC2383 23Base 333 JA DCLASSIFICATION OF hFE Millimete

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1013 TRANSISTOR (PNP) 1. BASE FEATURE 1 High voltage 2. COLLECTOR 2 2 3 Large continuous collector current capability 3. EMITTER MARKING: 1013 MAXIMUM RATINGS (Ta=25 unless otherwise noted )Symbol Parameter Value UnitVCBO Collector-Base Voltag

2SA1013 TO-92MOD Transistor (PNP)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE 5.800Features6.200High voltage:VCEO=-160V 8.4008.800Large continuous collector current capability 0.900Complementary to 2SC2383 1.1000.4000.60013.80014.2001.500 TYP2.900 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted)

2SA1013 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.70015.100Features7.800 High voltage:VCEO=-160V 8.2000.600 Large continuous collector current capability 0.800Complementary to 2SC2383 0.3500.55013.80014.200Dimensions in inches and (millimeters)1.270 TYPMAXIMUM RATINGS (TA=25 unless otherwise noted) 2.4402.640

2SA1013T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features ,, 2SC2383T High voltage, large continuous collector current capability, Complementary pair with 2SC2383T. / Applications ,

2SA1013 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features ,, 2SC2383 High voltage, large continuous collector current capability, Complementary pair with 2SC2383.. / Applications ,

SMD Type TransistorsPNP Transistors2SA10131.70 0.1 Features High voltage Large continuous collector current capability0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -160 V Emitter - Base Voltage VEBO -6 Collector Current

2SA1013SQ PNP TransistorFeatures SOT-89 High voltage Large continuous collector current capabilityEquivalent Circuit 2.Collector1.Base 2.Collector 3. EmitterMarking Code : 2SA1013SQ-R : 1013R 1.Base2SA1013SQ-O : 1013O 2SA1013SQ-Y : 1013Y3. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Va

INCHANGE Semiconductorisc Silicon PNP Transistor 2SA1013DESCRIPTIONHigh Voltage and High CurrentVceo=-160V(Min.Excellent hFE LinearityLow NoiseComplement to Type 2SC2383Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency general purpose amplifier ApplicationsDriver stage amplifier applications.AB