2SA1412-Z - Даташиты. Аналоги. Основные параметры

SMD Type Transistors PNP Silicon Transistor 2SA1412-Z TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features High Voltage VCEO=-400V High speed tr 0.7 s 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -400 V Co

isc Silicon NPN Power Transistor 2SA1412-Z DESCRIPTION With TO-252(DPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers High-speed inverters Converters High current switching applications ABSOLUTE MA

Ordering number EN2005B 2SA1416 / 2SC3646 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1416 / 2SC3646 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC

Ordering number EN2006C 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching 2SA1417 / 2SC3647 Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs. Specifications ( ) 2S

Ordering number EN1788B 2SA1418 / 2SC3648 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, 2SA1418 / 2SC3648 Preriver Applications Applications Color TV audio output, inverter. Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall siz

Ordering number EN1720A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1415/2SC3645 High-Voltage Switching, Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage (VCEO=160V). 2038 Excellent linearity of hFE and small Cob. [2SA1415/2SC3645] Fast switching speed. Very small size marking it easy to provide high

Ordering number EN2007B 2SA1419 / 2SC3649 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1419 / 2SC3649 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s. Specifications ( )

DATA SHEET www.onsemi.com Bipolar Transistor ELECTRICAL CONNECTION 2 2 ( )100 V, ( )1 A, Low VCE(sat), (PNP)NPN Single PCP 1 Base 1 1 2 Collector 3 Emitter 2SA1416, 2SC3646 3 3 2SA1416 2SC3646 Features Adoption of FBET and MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed 1 2 Ultrasmall Size Making it Easy to Provi

Ordering number EN1788C 2SA1418/2SC3648 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 0.7A, Low VCE sat , PNP NPN Single PCP Applicaitons Color TV audio output, inverter Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-

Ordering number EN2005C 2SA1416/2SC3646 Bipolar Transistor http //onsemi.com ( ) ) ( ), ( 100V, ( 1A, Low VCE sat PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s Specifications ( ) 2SA1416 Absol

DATA SHEET www.onsemi.com Bipolar Transistor 1 2 (-)100 V, (-)2 A, Low VCE(sat), 3 SOT-89-3 (PNP) NPN Single PCP CASE 419AU 2SA1417, 2SC3647 ELECTRICAL CONNECTION Features 2 2 Adoption of FBET, MBIT Processes 1 Base High Breakdown Voltage and Large Current Capacity 1 1 2 Collector Ultrasmall Size Making it Easy to Provide High-density Small-sized 3 Emitter

Ordering number EN2006D 2SA1417/2SC3647 Bipolar Transistor http //onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) 2SA1417 Absolute Maximum Rati

Ordering number EN1788C 2SA1418/2SC3648 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 0.7A, Low VCE sat , PNP NPN Single PCP Applicaitons Color TV audio output, inverter Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-

Ordering number EN2007C 2SA1419/2SC3649 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s Specifications ( ) 2SA1419 Absolute Maximum Ratings at

Ordering number EN2007C 2SA1419/2SC3649 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s Specifications ( ) 2SA1419 Absolute Maximum Ratings at

SMD Type Transistors PNP Transistors 2SA1413-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High Voltage VCEO=-600V 0.127 High Speed tf 1us +0.1 0.80-0.1 max Complement to 2SC3632-Z + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol

SMD Type Transistors PNP Transistors 2SA1418 1.70 0.1 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed 0.42 0.1 0.46 0.1 Complementary to 2SC3648 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -16

SMD Type Transistors PNP Transistors 2SA1417 1.70 0.1 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Complementary to 2SC3647 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100 V Emitter -

SMD Type or SMD Type TransistICs PNP Transistors 2SA1411 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Very high DC current gain hFE=500 to 1600. High VEBO Voltage VEBO=-10V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25 V Collector-emitte

SMD Type Transistors PNP Transistors 2SA1419 1.70 0.1 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Complementary to 2SC3649 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -160 V Emitter -

SMD Type Transistors PNP Transistors 2SA1415 1.70 0.1 Features Adoption of FBET Process High Breakdown Voltage (VCEO = 160V) Excellent Linearlity of hFE and Small Cob 0.42 0.1 0.46 0.1 Fast Switching Speed Complementary to 2SC3645 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Em

SMD Type Transistors PNP Transistors 2SA1416 1.70 0.1 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity 0.42 0.1 0.46 0.1 Fast Switching Time Complementary to 2SC3646 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100

isc Silicon PNP Power Transistor 2SA1413-Z DESCRIPTION With TO-252(DPAK) packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR