RoHS 2SA1611SOT-323 2SA1611 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 1. 25 0. 053. COLLECTOR Power dissipation PCM : 0.15 W (Tamb=25) 2. 30 0. 05 Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range Unit: mm TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (T

2SA1611 -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High DC Current Gain A High Voltage L3 Complementary to 2SC4177 3 Top View C B1CLASSIFICATION OF hFE 1 22 K EProduct-Rank 2SA1611-M4 2SA1611-M5Range 90~180 135~27

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors 2SA1611 TRANSISTOR (PNP) FEATURES SOT323 High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -60 V 2. EMITTER VCEO Collector-Emitter Vol

2SA1 61 1TRANSISTOR(PNP)FEATURES SOT323 High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -60 V 2. EMITTER VCEO Collector-Emitter Voltage -50 V 3. COLLECTOR V Emitter-Base Voltage -5 V EBOI Collector Current -100 mA CP Colle

SMD Type TransistorsPNP Transistors2SA1611 Features High DC Current Gain High Voltage Complementary to 2SC41771.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -100 mA