All Transistors. 2SA1611A Datasheet

 

2SA1611A Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1611A
   SMD Transistor Code: M4_M5_M6_M7
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: SOT323

 2SA1611A Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1611A Datasheet (PDF)

 ..1. Size:110K  wej
2sa1611a.pdf

2SA1611A
2SA1611A

RoHS 2SA1611SOT-323 2SA1611 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 1. 25 0. 053. COLLECTOR Power dissipation PCM : 0.15 W (Tamb=25) 2. 30 0. 05 Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range Unit: mm TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (T

 7.1. Size:194K  nec
2sa1611.pdf

2SA1611A
2SA1611A

 7.2. Size:104K  secos
2sa1611.pdf

2SA1611A

2SA1611 -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High DC Current Gain A High Voltage L3 Complementary to 2SC4177 3 Top View C B1CLASSIFICATION OF hFE 1 22 K EProduct-Rank 2SA1611-M4 2SA1611-M5Range 90~180 135~27

 7.3. Size:1044K  jiangsu
2sa1611.pdf

2SA1611A
2SA1611A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors 2SA1611 TRANSISTOR (PNP) FEATURES SOT323 High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -60 V 2. EMITTER VCEO Collector-Emitter Vol

 7.4. Size:274K  htsemi
2sa1611.pdf

2SA1611A

2SA1 61 1TRANSISTOR(PNP)FEATURES SOT323 High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -60 V 2. EMITTER VCEO Collector-Emitter Voltage -50 V 3. COLLECTOR V Emitter-Base Voltage -5 V EBOI Collector Current -100 mA CP Colle

 7.5. Size:1146K  kexin
2sa1611.pdf

2SA1611A
2SA1611A

SMD Type TransistorsPNP Transistors2SA1611 Features High DC Current Gain High Voltage Complementary to 2SC41771.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -100 mA

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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