2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC41022) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 Absolute maximum ratings (Ta=25C) 2.1Parameter Symbol Limits UnitCollector-base voltage VCBO 120 VC

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC2389S TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High Breakdown Voltage. 3. BASE Complements the 2SA1038S. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V

2SC2383 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383 Color TV Vertical Deflection Output Applications Unit: mmColor TV Class-B Sound Output Applications High breakdown voltage: VCEO = 160 V Large continuous collector current capability Recommended for vertical deflection output & sound output applications for line-operated TVs. Complem

2SC2383-RMCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-OCA 91311Phone: (818) 701-49332SC2383-YFax: (818) 701-4939Features Capable of 0.9Watts of Power Dissipation.NPN Silicon Collector-current 1.0A Collector-base Voltage 160VPlastic-Encapsulate Operating and storage junction temperature range: -55O

2SC2383-RMCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-OCA 91311Phone: (818) 701-49332SC2383-YFax: (818) 701-4939Features Capable of 0.9Watts of Power Dissipation.NPN Silicon Collector-current 1.0A Collector-base Voltage 160VPlastic-Encapsulate Operating and storage junction temperature range: -55O

2SC2383-RMCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-OCA 91311Phone: (818) 701-49332SC2383-YFax: (818) 701-4939Features Capable of 0.9Watts of Power Dissipation.NPN Silicon Collector-current 1.0A Collector-base Voltage 160VPlastic-Encapsulate Operating and storage junction temperature range: -55O

2SC2383PElectrical Characteristics @ TA=25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO IC=100A, IE=0Collector-Base Breakdown Voltage 160 VV(BR)CEO IC=10mA, IB=0Collector-Emitter Breakdown Voltage 160 VV(BR)EBO IE=10A, IC=0Emitter-Base Breakdown Voltage 6 VICBO VCB=150V, IE=0Collector-Base Cutoff Current 1 AIEBO VEB=6V, IC=0

UNISONIC TECHNOLOGIES CO., LTD 2SC2383 Preliminary NPN EPITAXIAL SILICON TRANSISTOR COLOR TV AUDIO OUTPUT & COLOR TV VERTICAL OUTPUT DESCRIPTION The UTC 2SC2383 is an NPN epitaxial silicon transistor, it uses UTCs advanced technology to provide customers high DC current gain and high breakdown voltage. The UTC 2SC2383 is usually used in Color TV Vertical Deflection Output

2SC2383 1A , 160V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 General Purpose Application 123B C ACLASSIFICATION OF hFE E ECProduct-Rank 2SC2383-O 2SC2383-Y Range 100~200 160~320 B DF GH KCollector PACKAGE INFORMATI

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors JC TTO-92MOD 2SC2383 TRANSISTOR (NPN) FEATURE 1. EMITTER High Voltage: VCEO=160V 2. COLLECTOR Large Continuous Collector Current Capability Complementary to 2SA1013 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base

2SC2383 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.1001Features7.8008.200 High voltage: VCEO=160V 0.6000.800 Large continuous collector current capability Complementary to 2SA1013 0.3500.55013.80014.2001.270 TYPDimensions in inches and (millimeters)2.440MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.6400.

2SC2383 TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 12. COLLECTOR 2 3 3. BASE 5.800Features6.200 High voltage: VCEO=160V 8.4008.800Large continuous collector current capability 0.900Complementary to 2SA1013 1.1000.4000.60013.80014.2001.500 TYP2.900Dimensions in inches and (millimeters)3.100MAXIMUM RATINGS (TA=25 unless otherwis

2SC2383T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features V , 2SA1013T CEOHigh VCEO, complementary pair with 2SA1013T. / Applications ,Color TV class B sound output applications.

2SC2383 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features V , 2SA1013 CEOHigh VCEO, complementary pair with 2SA1013. / Applications ,Color TV class B sound output applications..

SMD Type TransistorsNPN Transistors2SC23831.70 0.1 Features High voltage: VCEO=160V Large continuous collector current capability0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Collector

2SC2383NPN Transistors FeaturesExcellent h characteristicsFE 321.Base12.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Value Unit Collector Base Voltage VCBO 160 VCollector Emitter Voltage VCEO 160 VEmitter Base Voltage VEBO 6 VCollector Current IC 1 ABase Current IB 0.5 ACollector Power

2SC2383 SOT-89 NPN Transistors3 Features2 Small Flat Package1.Base1 General Purpose Application2.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 1

INCHANGE Semiconductorisc Silicon NPN Pow Transistor 2SC2383DESCRIPTIONHigh breakdown voltageLow output capacitanceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV class B sound output applicationsColor TV vert.deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col