Биполярный транзистор 2SC2883-Y - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC2883-Y
Маркировка: GY
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 120 MHz
Ёмкость коллекторного перехода (Cc): 40 pf
Статический коэффициент передачи тока (hfe): 160
Корпус транзистора: SOT89
Аналоги (замена) для 2SC2883-Y
2SC2883-Y Datasheet (PDF)
2sc2883-y.pdf
MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth 2SC2883-OMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC2883-YFax: (818) 701-4939Features Power amplifier applications NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Power Transistors Epoxy meets UL 94 V-0 flammability
2sc2883-o.pdf
MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth 2SC2883-OMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC2883-YFax: (818) 701-4939Features Power amplifier applications NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Power Transistors Epoxy meets UL 94 V-0 flammability
2sc2883.pdf
2SC2883 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2883 Audio Frequency Amplifier Applications Unit: mm Suitable for output stage of 3 watts amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1203 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO
2sc2883.pdf
2SC2883 1.5 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-89 Low Voltage. 412CLASSIFICATION OF hFE 3AECProduct-Rank 2SC2883-O 2SC2883-YRange 100~200 160~320B DMarking GO GYF GH KJ LPACKAGE INFORMATION Millimeter MillimeterREF. REF.
2sc2883.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2883 TRANSISTOR (NPN) 1. BASE FEATURES Low voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value UnitVCBO 30 VCollector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5
2sc2883.pdf
2SC2883TRANSISTOR (NPN) SOT-89 FEATURES Low voltage 1. BASE 2. COLLECTOR 1 MAXIMUM RATINGS (TA=25 unless otherwise noted) 2 Symbol Parameter Value Units3. EMITTER 3 VCBO 30 VCollector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temp
2sc2883 sot-89.pdf
2SC2883 SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 4.61 B4.41.61.81.41.42 3. EMITTER 3 2.64.252.43.75Features 0.8MIN0.530.400.48 Low voltage 0.442x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO 30 VCollector-Base Voltage
2sc2883.pdf
SMD Type TransistorsNPN Transistors2SC2883 Features1.70 0.1 Suitable for output stage of 3 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate)0.42 0.10.46 0.1 Complementary to 2SA12031.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30
2sc2883o 2sc2883y.pdf
2SC2883 NPN-General use transistor 1W 1.5A30V Applications 4Can be used for switching and amplifying inin various electrical and electronic equipments MAX RATINGS 1 2 3parameters symbol rating unit SOT-89 collector-emitter voltageIB=0 VCEO 30 V collector-base voltageIE=0 VCBO 40 V 1Base 2Collector 3Collector 3Emitter emitter - base
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050