2SC2883-Y Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2883-Y
SMD Transistor Code: GY
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT89
2SC2883-Y Transistor Equivalent Substitute - Cross-Reference Search
2SC2883-Y Datasheet (PDF)
2sc2883-y.pdf
MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth 2SC2883-OMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC2883-YFax: (818) 701-4939Features Power amplifier applications NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Power Transistors Epoxy meets UL 94 V-0 flammability
2sc2883-o.pdf
MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth 2SC2883-OMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC2883-YFax: (818) 701-4939Features Power amplifier applications NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Power Transistors Epoxy meets UL 94 V-0 flammability
2sc2883.pdf
2SC2883 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2883 Audio Frequency Amplifier Applications Unit: mm Suitable for output stage of 3 watts amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1203 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO
2sc2883.pdf
2SC2883 1.5 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-89 Low Voltage. 412CLASSIFICATION OF hFE 3AECProduct-Rank 2SC2883-O 2SC2883-YRange 100~200 160~320B DMarking GO GYF GH KJ LPACKAGE INFORMATION Millimeter MillimeterREF. REF.
2sc2883.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2883 TRANSISTOR (NPN) 1. BASE FEATURES Low voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value UnitVCBO 30 VCollector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5
2sc2883.pdf
2SC2883TRANSISTOR (NPN) SOT-89 FEATURES Low voltage 1. BASE 2. COLLECTOR 1 MAXIMUM RATINGS (TA=25 unless otherwise noted) 2 Symbol Parameter Value Units3. EMITTER 3 VCBO 30 VCollector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temp
2sc2883 sot-89.pdf
2SC2883 SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 4.61 B4.41.61.81.41.42 3. EMITTER 3 2.64.252.43.75Features 0.8MIN0.530.400.48 Low voltage 0.442x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO 30 VCollector-Base Voltage
2sc2883.pdf
SMD Type TransistorsNPN Transistors2SC2883 Features1.70 0.1 Suitable for output stage of 3 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate)0.42 0.10.46 0.1 Complementary to 2SA12031.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30
2sc2883o 2sc2883y.pdf
2SC2883 NPN-General use transistor 1W 1.5A30V Applications 4Can be used for switching and amplifying inin various electrical and electronic equipments MAX RATINGS 1 2 3parameters symbol rating unit SOT-89 collector-emitter voltageIB=0 VCEO 30 V collector-base voltageIE=0 VCBO 40 V 1Base 2Collector 3Collector 3Emitter emitter - base
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
