Биполярный транзистор 2SC4110-F2
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4110-F2
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 160
W
Макcимально допустимое напряжение коллектор-база (Ucb): 500
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V
Макcимальный постоянный ток коллектора (Ic): 25
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 20
MHz
Ёмкость коллекторного перехода (Cc): 300
pf
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора:
TO204
Аналоги (замена) для 2SC4110-F2
2SC4110-F2
Datasheet (PDF)
..1. Size:112K inchange semiconductor
2sc4110-f2.pdf 
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4110 DESCRIPTION With TO-3 package Fast switching speed Wide area of safe operation High voltage,high reliability APPLICATIONS For switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE
7.1. Size:108K sanyo
2sc4110.pdf 
Ordering number:EN2475BNPN Triple Diffused Planar Silicon Transistor2SC4110400V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2022A Wide ASO.[2SC4110] Adoption of MBIT process.15.63.24.814.02.01.61.42.00.61.01 2 31 : Base0.62 : Collector3 : E
7.2. Size:249K nell
2sc4110b.pdf 
RoHS 2SC4110B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor25A/400V Switching Regulator Applications15.60.44.80.29.62.00.13.20,1TO-3P(B)23FEATURES+0.2+0.20.651.05-0.1-0.1High-speed switchingHigh breakdown voltage and high reliability5.450.1 5.450.11.4Wide SOA (Safe Operation Area)
7.3. Size:1290K cn sps
2sc4110t4tl.pdf 
2SC4110T4TLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Volta
7.4. Size:183K cn sptech
2sc4110l 2sc4110m 2sc4110n.pdf 
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC4110DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 V
7.5. Size:226K inchange semiconductor
2sc4110.pdf 
isc Silicon NPN Power Transistor 2SC4110DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
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