Справочник транзисторов. 2SC4672-Q

 

Биполярный транзистор 2SC4672-Q - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC4672-Q
   Маркировка: DKQ
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 210 MHz
   Ёмкость коллекторного перехода (Cc): 25 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: SOT89

 Аналоги (замена) для 2SC4672-Q

 

 

2SC4672-Q Datasheet (PDF)

 ..1. Size:69K  rohm
2sc4672-p 2sc4672-q.pdf

2SC4672-Q
2SC4672-Q

2SC4672 Transistors Low Frequency Transistor (50V, 3A) 2SC4672 Features 1) Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. 2) Excellent DC current gain characteristics. 3) Complements the 2SA1797. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage

 ..2. Size:578K  mcc
2sc4672-q.pdf

2SC4672-Q
2SC4672-Q

2SC4672-PMCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4672-QMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4672-RFax: (818) 701-4939FeaturesNPN Ideally Suited For Automatic Instertion Untral Small Surface Mount PackagePlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See order

 ..3. Size:1623K  slkor
2sc4672-p 2sc4672-q 2sc4672-r.pdf

2SC4672-Q
2SC4672-Q

2SC4672NPN Transistors Features Low Saturation Voltage Excellent hFE Characteristics Complementary to 2SA1797321 1.Base2.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Cur

 ..4. Size:1106K  cn evvo
2sc4672-p 2sc4672-q 2sc4672-r.pdf

2SC4672-Q
2SC4672-Q

2SC4672NPN Transistors3 Features2 Low Saturation Voltage1 1.Base Excellent hFE Characteristics2.Collector Complementary to 2SA17973.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Cur

 6.1. Size:578K  mcc
2sc4672-p.pdf

2SC4672-Q
2SC4672-Q

2SC4672-PMCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4672-QMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4672-RFax: (818) 701-4939FeaturesNPN Ideally Suited For Automatic Instertion Untral Small Surface Mount PackagePlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See order

 6.2. Size:590K  mcc
2sc4672-r.pdf

2SC4672-Q
2SC4672-Q

2SC4672-PMCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4672-QMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4672-RFax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF"NPN Ideally Suited For Automatic Instertion Untral Small Surface Mount PackagePlastic-Encapsulate Lead Free Finish/R

 7.1. Size:45K  rohm
2sa1797 2sb1443 2sc4672.pdf

2SC4672-Q

2SA1797 / 2SB1443TransistorsTransistors2SC4672(96-100-B208)(96-181-D208)291

 7.2. Size:65K  rohm
2sc4672.pdf

2SC4672-Q
2SC4672-Q

2SC4672 Transistors Low Frequency Transistor (50V, 3A) 2SC4672 Features 1) Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. 2) Excellent DC current gain characteristics. 3) Complements the 2SA1797. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage

 7.3. Size:293K  utc
2sc4672.pdf

2SC4672-Q
2SC4672-Q

UNISONIC TECHNOLOGIES CO., LTD 2SC4672 NPN SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR (50V,2A) DESCRIPTION The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. FEATURES *Low Saturation Voltage, Typically VCE(SAT)=0.1V at IC / IB=1A / 50mA *Excellent DC Current Gain Characteristics ORDERING INFORMATION Pin Assignment Order

 7.4. Size:270K  secos
2sc4672.pdf

2SC4672-Q
2SC4672-Q

2SC4672 500 mW, 60 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 A suffix of -C specifies halogen & lead-free FEATURES 4 Low saturation voltage, typically VCE(SAT)=0.1V at IC/IB=1A/50mA. Excellent DC current gain characteristics. 123A Complements the 2SA1797 ECB DCollectorF GH KJ L

 7.5. Size:651K  jiangsu
2sc4672.pdf

2SC4672-Q
2SC4672-Q

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC4672 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Saturation Voltage Excellent hFE Characteristics 3. EMITTER Complements the 2SA1797 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Co

 7.6. Size:614K  htsemi
2sc4672.pdf

2SC4672-Q
2SC4672-Q

2SC4672 SOT-89-3L TRANSISTOR (NPN)1. BASE FEATURES 2. COLLECTOR Low Saturation Voltage Excellent hFE Characteristics 3. EMITTER Complements the 2SA1797 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current 2 A PC Coll

 7.7. Size:231K  lge
2sc4672 sot-89.pdf

2SC4672-Q
2SC4672-Q

2SC4672 SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 4.61 B4.41.61.81.41.42 3. EMITTER 3 2.64.252.43.75Features 0.8MIN0.530.400.48Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. 0.44 2x)0.13 B0.35 0.371.5 Excellent DC current gain characteristics. 3.0Complements the 2SA1797. Dimensions in inches

 7.8. Size:240K  wietron
2sc4672.pdf

2SC4672-Q
2SC4672-Q

2SC4672NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123Features:SOT-89* Low saturation voltage, typically VCE(sat) =0.35V at IC/IB=1A/50mA.* Excellent DC current gain characteristics.Mechanical Data:* Case : Molded PlasticABSOLUTE MAXIMUM RATINGS(TA=25C Unless Otherwise Noted)Rating Symbol Value UnitVCBO60 VCollector to B

 7.9. Size:417K  willas
2sc4672.pdf

2SC4672-Q
2SC4672-Q

FM120-M WILLAS2SC4672 THRUSOT-89 Plastic-Encapsulate TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeaturesSOT-89TRANSISTOR (NPN) esign, excellent power dissipation offers Batch process d better reverse leakage current and thermal resistance.SOD-123HFEATURES Low profile surface

 7.10. Size:651K  blue-rocket-elect
2sc4672.pdf

2SC4672-Q
2SC4672-Q

2SC4672 Rev.J Jan.-2019 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features ,, 2SA1797 Low saturation voltage, excellent DC current gain characteristics, complements the 2SA1797. / Applications

 7.11. Size:193K  semtech
2sc4672u-h4031.pdf

2SC4672-Q
2SC4672-Q

2SC4672U-H4031 NPN Silicon Epitaxial Planar Transistor Low Frequency Transistor Absolute Maximum Ratings (T = 25) aParameter Symbol Value Unit Collector Base Voltage V 60 V CBOCollector Emitter Voltage V 50 V CEOEmitter Base Voltage V 6 V EBOCollector Current - DC I 3 CA Collector Current - Pulse 1) I 6 CP0.5 P Total Power Dissipation tot W 2 2) Jun

 7.12. Size:539K  semtech
st2sc4672u.pdf

2SC4672-Q
2SC4672-Q

ST 2SC4672U NPN Silicon Epitaxial Planar Transistor Low Frequency Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 6 VCollector Current - DC IC 3 A Collector Current - Pulse 1) ICP 6 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ

 7.13. Size:362K  kexin
2sc4672.pdf

2SC4672-Q
2SC4672-Q

SMD Type TransistorsNPN Transistors2SC4672Features1.70 0.1Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA.Excellent DC current gain characteristics.0.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage VEBO 6

 7.14. Size:494K  cn shikues
2sc4672q 2sc4672r.pdf

2SC4672-Q
2SC4672-Q

2SC4672NPN-Silicon General use Transistors41W 1.5A25V 1 2 3ApplicationsCan be used for switching and amplifying in various SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating UnitV VCEO 25Collector-emitter voltage (IB=0) VCBO 40 VCollector-base voltageIE=0 VEBO 6 VEmitter-base voltageIC=0 IC 1.5 ACollector

 7.15. Size:170K  cn hottech
2sc4672.pdf

2SC4672-Q
2SC4672-Q

Plastic-Encapsulate TransistorsFEATURES2SC4672 (NPN) Low saturation voltage, typically VCE (sat) =0.1V atIC/IB =1A /50mA. Excellent DC current gain characteristics. Complements the 2SA1797.Maximum Ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 60 V1. BASECollector-Emitter Voltage VCEO 50 V2. COLLECTO SOT-89Emitter-

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