Биполярный транзистор 2SC4793AF - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4793AF
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 230 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 230 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 20 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: TO220F
Аналоги (замена) для 2SC4793AF
2SC4793AF Datasheet (PDF)
2sc4793af.pdf
RoHS RoHS 2SC4793AFSEMICONDUCTORNell High Power ProductsHigh Frequency NPN Power Transistor1A/230V/20WFEATURESHigh transition frequency:fT = 100MHz (typ.)Complementary to 2SA1837AFTO-220F package which can be BCEinstalled to the heat sink with one screwTO-220F APPLICATIONS(2SC4793AF)Power amplifierDriver stage amplifier (2)CB(1)NPNE(3)ABSOLUT
2sc4793.pdf
2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1837 Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter voltage VCEO 230 VEmitter-base voltage VEBO
2sc4793.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC4793 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR FEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applications 1TO-220F*Pb-free plating product number:2SC4793L ORDERING INFORMATION Order Number Pin AssignmentPackage Packing Normal Lead Free Plating 1 2 32SC4793-x-TF3-T 2SC4793L-x-TF3-T T
2sc4793.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC4793 DESCRIPTION With TO-220F package Complement to type 2SA1837 High transition frequency APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings
2sc4793.pdf
NPN Silicon NPN Triple Diffused Transistor R 2SC4793 APPLICATIONS Power Amplifier Applications FEATURES V =230V (min) High collector voltage V =230V (min) CEOCEO 2SA1837 Complementary to 2SA1937 High transition frequency :fT=100MHz(Typ.) f T=100MHz(Typ.) RoHS product RoHS Package TO-220MF ORDER MESSAGE Order codes Mark
2sc4793d.pdf
2SC4793D(BR3DA4793D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features , 2SA1837D(BR3CA1837D) High fT, complementary pair with 2SA1837D(BR3CA1837D). / Applications Power amplifier and d
2sc4793.pdf
DIP Type TransistorsTransistorsNPN Transistors2SC4793 FeaturesTO-220MF Units:mm High collector voltageVCEO=230V (min) Complementary to 2SA1837 High transition frequency :fT=100MHz(Typ.) RoHS product Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 230V Collector - Emitter Voltage VCEO 230 Emitt
2sc4793.pdf
442SC4793 NPN 4 Silicon NPN Triple Diffused Transistor APPLICATIONS 4 Power Amplifier Applications FEATURES VCEO=230V (min) High collector voltageVCEO=230V (min) 2SA1837
2sc4793.pdf
Silicon PNP transistorPower Amplifier Applications Complementary to 2SA1837 High collector voltage:VCEO=230V (min)Note: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature, etc.) may cause this product to decrease in thereliability significantly even if the operating conditions (i.e.operatin
2sc4793.pdf
2SC4793Minos Silicon NPNTriple diffusionType2SC4793Power Amplifier ApplicationsComplementaryto 2SA1837Highcollector voltage:VCEO=230V (min)Note: Using continuously under heavy loads (e.g. theapplicationof hightemperature/current/voltageandthe significant changeintemperature, etc.) may causethis product todecrease inthereliability significantly even if the operating conditions
2sc4793.pdf
isc Silicon NPN Power Transistor 2SC4793DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOHigh Current-Gain Bandwidth ProductComplement to Type 2SA1837Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050