2SC5636 - Даташиты. Аналоги. Основные параметры

mm 1.6 0.4 0.4 0.8 1

Ordering number ENN6465 NPN Triple Diffused Planar Silicon Transistor 2SC5637 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2174 High reliability (Adoption of HVP process). [2SC5637] Adoption of MBIT process. 3.4 5.6 16.0 3.1 2.8 2.0 2

Ordering number ENN6466 NPN Triple Diffused Planar Silicon Transistor 2SC5638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2174 High reliability (Adoption of HVP process). [2SC5638] Adoption of MBIT process. 3.4 5.6 16.0 3.1 2.8 2.0 2

Ordering number ENN6467 NPN Triple Diffused Planar Silicon Transistor 2SC5639 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2174 High reliability (Adoption of HVP process). [2SC5639] Adoption of MBIT process. 3.4 5.6 16.0 3.1 2.8 2.0 2

Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching Unit mm 0.15+0.10 0.3+0.1 0.05 0.0 Features 3 High transition frequency fT S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.65) (0.65) 1.3 0.1 2.0 0.2 Absolute Maximum Ratings Ta = 25 C

2SC5631 Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier ADE-208-981A (Z) 2nd. Edition Mar. 2001 Features High gain bandwidth product fT = 11 GHz typ. High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector Note Marking is JR . 2SC5631 Absolute Maximum Rati

SMALL-SIGNAL TRANSISTOR 2SC5633 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit 2SC5633 is a super mini package resin sealed 4.6 MAX silicon NPN epitaxial transistor, 1.5 1.6 It is designed for high voltage application. C E B 0.53 FEATURE 0.4 MAX Low collector to emitter saturation voltage. 0.48

mm 2.1 0.425 0.425 1.25 1

mm 2.5 0.5 0.5 1.5 1

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC5635LT1G 1.High gain bandwidth product.(Typ.fT=8.0GHz) S-L2SC5635LT1G 2.High gain,low noise 3.Can operate at low voltage 4.We declare that the material of product compliance with RoHS requirements. 4.S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control Change Requirements;

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC5635WT1G 1.High gain bandwidth product.(Typ.fT=8.0GHz) 2.High gain,low noise S-L2SC5635WT1G 3.Can operate at low voltage 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC