2SC6096-TD-H datasheet, аналоги, основные параметры
Наименование производителя: 2SC6096-TD-H 📄📄
Маркировка: QG
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 3.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6.5 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 13 pf
Статический коэффициент передачи тока (hFE): 300
Корпус транзистора: SOT89
📄📄 Копировать
Аналоги (замена) для 2SC6096-TD-H
- подборⓘ биполярного транзистора по параметрам
2SC6096-TD-H даташит
..1. Size:198K onsemi
2sc6096 2sc6096-td-h.pdf 
Ordering number ENA0434A 2SC6096 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat , NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipati
7.1. Size:47K sanyo
2sc6096.pdf 
Ordering number ENA0434 2SC6096 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6096 High-Voltage Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch
7.2. Size:315K onsemi
2sc6096.pdf 
Ordering number ENA0434A 2SC6096 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat , NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipati
8.1. Size:50K sanyo
2sc6092ls.pdf 
Ordering number ENA0834 2SC6092LS SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6092LS Output Applications Features High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symb
8.2. Size:40K sanyo
2sc6099.pdf 
Ordering number ENA0435 2SC6099 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6099 High-Voltage Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch
8.3. Size:51K sanyo
2sc6090ls.pdf 
Ordering number ENA0996 2SC6090LS SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6090LS Output Applications Features High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symb
8.4. Size:50K sanyo
2sc6097.pdf 
Ordering number ENA0412 2SC6097 NPN Epitaxial Planar Silicon Transistor 2SC6097 High-Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dis
8.5. Size:40K sanyo
2sc6098.pdf 
Ordering number ENA0413 2SC6098 NPN Epitaxial Planar Silicon Transistor 2SC6098 High-Voltage Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dis
8.6. Size:48K sanyo
2sc6093.pdf 
Ordering number ENA0274 2SC6093LS SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6093LS Output Applications Features High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. Specifications Absolute Maximum Rating
8.8. Size:425K sanyo
2sc6095.pdf 
2SC6095 Ordering number ENA0411A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6095 High-Voltage Switching Applications Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switchin
8.9. Size:295K onsemi
2sc6099-e 2sc6099.pdf 
Ordering number ENA0435A 2SC6099 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss
8.10. Size:401K onsemi
2sc6099.pdf 
Ordering number ENA0435A 2SC6099 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss
8.11. Size:410K onsemi
2sc6097.pdf 
Ordering number ENA0412A 2SC6097 Bipolar Transistor http //onsemi.com ( ) 60V, 3A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissi
8.12. Size:408K onsemi
2sc6098.pdf 
Ordering number ENA0413A 2SC6098 Bipolar Transistor http //onsemi.com ( ) 80V, 2.5A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dis
8.13. Size:307K onsemi
2sc6097-e 2sc6097.pdf 
Ordering number ENA0412A 2SC6097 Bipolar Transistor http //onsemi.com ( ) 60V, 3A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissi
8.14. Size:330K onsemi
2sc6094.pdf 
Ordering number ENA0410A 2SC6094 Bipolar Transistor http //onsemi.com ( ) 60V, 3A, Low VCE sat , NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipatio
8.15. Size:322K onsemi
2sc6095.pdf 
Ordering number ENA0411A 2SC6095 Bipolar Transistor http //onsemi.com ( ) 80V, 2.5A, Low VCE sat , NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipat
8.16. Size:300K onsemi
2sc6098-e 2sc6098.pdf 
Ordering number ENA0413A 2SC6098 Bipolar Transistor http //onsemi.com ( ) 80V, 2.5A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dis
8.17. Size:170K inchange semiconductor
2sc6090.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6090 DESCRIPTION Collector-Base Breakdown Voltage- V = 1500V (Min) (BR)CEO High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 )
8.20. Size:250K inchange semiconductor
2sc6098.pdf 
isc Silicon NPN Power Transistor 2SC6098 DESCRIPTION Large current capacitance High-speed switching High allowable power dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
8.21. Size:181K inchange semiconductor
2sc6093.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6093 DESCRIPTION Low saturation voltage Built-in damper diode type 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage color display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
Другие транзисторы: 2SC5974B, 2SC5994-TD-E, 2SC6017-E, 2SC6017-TL-E, 2SC6046, 2SC6094-TD-E, 2SC6095-TD-E, 2SC6096-TD-E, D965, 2SC6097-E, 2SC6097-TL-E, 2SC6098-E, 2SC6098-TL-E, 2SC6099-E, 2SC6099-TL-E, 2SC6105, 2SC6114G5GP
