Справочник транзисторов. MJE13002G1

 

Биполярный транзистор MJE13002G1 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: MJE13002G1

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 1 W

Макcимально допустимое напряжение коллектор-база (Ucb): 600 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V

Макcимальный постоянный ток коллектора (Ic): 0.75 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 5 MHz

Статический коэффициент передачи тока (hfe): 10

Корпус транзистора: TO92

Аналоги (замена) для MJE13002G1

 

 

MJE13002G1 Datasheet (PDF)

1.1. mje13002g6.pdf Size:220K _update

MJE13002G1
MJE13002G1

MJE13002G6(3DD13002G6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.2. mje13002g1.pdf Size:213K _update

MJE13002G1
MJE13002G1

MJE13002G1(3DD13002G1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

 1.3. mje13002g5.pdf Size:269K _update

MJE13002G1
MJE13002G1

MJE13002G5(3DD13002G5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.4. mje13002g2.pdf Size:218K _update

MJE13002G1
MJE13002G1

MJE13002G2(3DD13002G2) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

 1.5. mje13002g.pdf Size:303K _update

MJE13002G1
MJE13002G1

UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor co

Другие транзисторы... MJE13002DG1 , MJE13002E1 , MJE13002E2 , MJE13002F1 , MJE13002F2 , MJE13002F5 , MJE13002F6 , MJE13002G , BC547B , MJE13002G2 , MJE13002G5 , MJE13002G6 , MJE13002H1 , MJE13002H5 , MJE13002H6 , MJE13002I5 , MJE13002I6 .

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