Справочник транзисторов. MJE13002G6

 

Биполярный транзистор MJE13002G6 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MJE13002G6
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 30 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 0.75 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 5 MHz
   Статический коэффициент передачи тока (hfe): 10
   Корпус транзистора: TO126

 Аналоги (замена) для MJE13002G6

 

 

MJE13002G6 Datasheet (PDF)

 ..1. Size:220K  foshan
mje13002g6.pdf

MJE13002G6
MJE13002G6

MJE13002G6(3DD13002G6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 5.1. Size:303K  utc
mje13002g.pdf

MJE13002G6
MJE13002G6

UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002-E designed for use in highvolatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters, DC-DC converter, Motor co

 5.2. Size:218K  foshan
mje13002g2.pdf

MJE13002G6
MJE13002G6

MJE13002G2(3DD13002G2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 5.3. Size:269K  foshan
mje13002g5.pdf

MJE13002G6
MJE13002G6

MJE13002G5(3DD13002G5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 5.4. Size:213K  foshan
mje13002g1.pdf

MJE13002G6
MJE13002G6

MJE13002G1(3DD13002G1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

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