All Transistors. MJE13002G6 Datasheet

 

MJE13002G6 Transistor. Datasheet pdf. Equivalent

Type Designator: MJE13002G6

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 0.75 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO126

MJE13002G6 Transistor Equivalent Substitute - Cross-Reference Search

MJE13002G6 Datasheet (PDF)

1.1. mje13002g6.pdf Size:220K _update

MJE13002G6
MJE13002G6

MJE13002G6(3DD13002G6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.2. mje13002g1.pdf Size:213K _update

MJE13002G6
MJE13002G6

MJE13002G1(3DD13002G1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.3. mje13002g5.pdf Size:269K _update

MJE13002G6
MJE13002G6

MJE13002G5(3DD13002G5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.4. mje13002g2.pdf Size:218K _update

MJE13002G6
MJE13002G6

MJE13002G2(3DD13002G2) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.5. mje13002g.pdf Size:303K _update

MJE13002G6
MJE13002G6

UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor co

Datasheet: MJE13002F1 , MJE13002F2 , MJE13002F5 , MJE13002F6 , MJE13002G , MJE13002G1 , MJE13002G2 , MJE13002G5 , 9014 , MJE13002H1 , MJE13002H5 , MJE13002H6 , MJE13002I5 , MJE13002I6 , MJE13002I7 , MJE13002VH1 , MJE13003DG1 .

 


MJE13002G6
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