MJE15034G - Даташиты. Аналоги. Основные параметры

MJE15034 NPN, MJE15035 PNP Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices http //onsemi.com Complementary silicon plastic power transistors are designed for 4.0 AMPERES use as high-frequency drivers in audio amplifiers. POWER TRANSISTORS Features COMPLEMENTARY SILICON hFE = 100 (Min) @ IC = 0.5 Adc 350 VOLTS, 50 WATTS = 10 (Min) @ IC = 2.0 Adc C

MJE15034 NPN, MJE15035 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices http //onsemi.com . . . designed for use as high-frequency drivers in audio amplifiers. hFE = 100 (Min) @ IC = 0.5 Adc 4.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS Collector-Emitter Sustaining Voltage - VCEO(sus) = 350 Vdc (Min) - MJE15034, MJE150

MJE15034 (NPN), MJE15035 (PNP) Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices www.onsemi.com Complementary silicon plastic power transistors are designed for 4.0 AMPERES use as high-frequency drivers in audio amplifiers. POWER TRANSISTORS Features COMPLEMENTARY SILICON High Current Gain - Bandwidth Product 350 VOLTS, 50 WATTS TO-220 Compact Packa

MJE15036 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features - MJE15037 High DC current gain, High VCEO, High fT, Complementary pair with MJE15037. / Appli

MJE15037 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220 PNP Silicon PNP transistor in a TO-220 Plastic Package. / Features - MJE15036 High DC current gain, High VCEO, High fT, Complementary pair with MJE15036. / Appli

Order this document MOTOROLA by MJE15032/D SEMICONDUCTOR TECHNICAL DATA NPN * MJE15032 Complementary Silicon Plastic PNP Power Transistors * MJE15033 . . . designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc *Motorola Preferred Device hFE = 10 (Min) @ IC = 2.0 Adc Collector Emitter Su

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE DC Current Gain Specified to 4.0 A POWER TRANSISTORS hFE = 40 (Min) @ IC = 3.0 Adc COMPLEMENTARY SILICON = 20 (Min) @ IC = 4.0 Adc 120-150 VOLTS, 50 WATTS Coll

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant* 120-

ON Semiconductort NPN Complementary Silicon Plastic * MJE15032 Power Transistors PNP . . . designed for use as high frequency drivers in audio amplifiers. * MJE15033 DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc = 10 (Min) @ IC = 2.0 Adc *ON Semiconductor Preferred Device Collector Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) M

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 250 Vd

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE DC Current Gain Specified to 4.0 A POWER TRANSISTORS hFE = 40 (Min) @ IC = 3.0 Adc COMPLEMENTARY SILICON = 20 (Min) @ IC = 4.0 Adc 120-150 VOLTS, 50 WATTS Coll

MJE15032 (NPN), MJE15033 (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes 8.0 AMPERES hFE = 70 (Min) @ IC = 0.5 Adc POWER TRANSISTORS = 10 (Min) @ IC = 2.0 Adc COMPLEMENTARY SILICON Collector-Emitter Sustaining Voltage -

MJE15034 NPN, MJE15035 PNP Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices http //onsemi.com Complementary silicon plastic power transistors are designed for 4.0 AMPERES use as high-frequency drivers in audio amplifiers. POWER TRANSISTORS Features COMPLEMENTARY SILICON hFE = 100 (Min) @ IC = 0.5 Adc 350 VOLTS, 50 WATTS = 10 (Min) @ IC = 2.0 Adc C

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 250 Vd

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL POWER TRANSISTORS MJE15032 NPN MJE15033 PNP TO - 220 Plastic Package High - Frequency Drivers in Audio Amplifier ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector- Base Voltage VCBO 250 V Collector- Emitter Voltage VCEO 250 V 5 Emitter- Base Voltage VEBO V 8

SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJE15031 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = 0.5A T C DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJE15030 APPLICATIONS Designed for use as high freque

SPTECH Product Specification SPTECH Silicon NPN Power Transistor MJE15032 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) DC current gain - h = 50 (Min) @I = 0.5 A FE C h = 10 (Min) @I = 2.0 A FE C Complement to Type MJE15033 APPLICATIONS Designed for use as high frequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) S

SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJE15033 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -250V(Min) CEO(SUS) DC current gain - h = 50 (Min) @I = -0.5 A FE C h = 10 (Min) @I = -2.0 A FE C Complement to Type MJE15032 APPLICATIONS Designed for use as high frequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS (Ta=25 )

SPTECH Product Specification SPTECH Silicon NPN Power Transistor MJE15030 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = 0.5A T C DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJE15031 APPLICATIONS Designed for use as high freque

isc Silicon PNP Power Transistor MJE15031 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = 0.5A T C DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJE15030 Minimum Lot-to-Lot variations for robust device performance and reliable operat

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE15032 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min) DC current gain - hFE = 50 (Min) @IC= 0.5 A hFE = 10 (Min) @IC= 2.0 A Complement to Type MJE15033 APPLICATIONS Designed for use as high frequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RA

isc Silicon PNP Power Transistor MJE15033 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -250V(Min) CEO(SUS) DC current gain - h = 50 (Min) @I = -0.5 A FE C h = 10 (Min) @I = -2.0 A FE C Complement to Type MJE15032 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as high frequency drivers in a

isc Silicon NPN Power Transistor MJE15036 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) DC current gain - h = 5000 (Min) @I = 0.5 A FE C h = 3000 (Min) @I = 2.0 A FE C Complement to Type MJE15037 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as high frequency drivers in

isc Silicon PNP Power Transistor MJE15037 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -250V(Min) CEO(SUS) DC current gain - h = 5000 (Min) @I = -0.5 A FE C h = 3000 (Min) @I = -2.0 A FE C Complement to Type MJE15036 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as high frequency drivers

isc Silicon NPN Power Transistor MJE15030 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = 0.5A T C DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJE15031 Minimum Lot-to-Lot variations for robust device performance and reliable operat